Influence of absorber/barrier strain on 1/f noise characteristic of very long wavelength infrared detectors with InAs/GaSb superlattice

Abstract

Reducing 1/f noise is critical for enhancing VLWIR detector performance. However, its origin in T2SL nBn detectors remains unclear. In this study, we demonstrate that lattice mismatch at the absorber/barrier interface significantly contributes to 1/f noise. Structural and electrical analyses of three InAs/GaSb T2SL detectors reveal that increased absorber/barrier strain correlates directly with higher trap-assisted tunneling (TAT) current and greater 1/f noise. Our findings indicate a proportional relationship between interface strain, trap density, and 1/f noise magnitude, suggesting strain engineering as a promising strategy to suppress 1/f noise in VLWIR nBn detectors. © © 2025. Published by Elsevier B.V.