Detail View

  Department of Energy Science and Engineering Theses Ph.D.

Band Structure Engineering for Optimal Optoelectronic Device

Citations

WEB OF SCIENCE

Citations

SCOPUS

Metadata Downloads

XML
Excel
DC Field Value Language
dc.contributor.advisor 이종수 -
dc.contributor.author Sang-Hyeon Lee -
dc.date.accessioned 2026-09-01T19:29:59Z -
dc.date.available 2026-09-01T19:29:59Z -
dc.date.issued 2026 -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/60741 -
dc.identifier.uri http://dgist.dcollection.net/common/orgView/200001006998 -
dc.description 2D materials, Optoelectric device, Low-dimensional materials, Tunneling device, Computational Spectrometer, Defect engineering -
dc.description.tableofcontents List of Contents

Abstract i
List of contents ii
List of figures iv

1. Introduction
1.1 Two-Dimensional Material 1
1.1.1 Introduction to of Two-Dimensional Materials1
1.1.2 Fundamental Properties of Two-Dimensional Materials 5
1.2 Heterostructure9
1.2.1 Concept of Heterojunctions 9
1.2.2 2D/2D Heterostructure 13
1.2.3 Characterization and Analysis of 2D Heterostructures 17
1.3 Fabrication of 2D Heterostructures 23
1.3.1 Synthesis and Preparation of 2D materials 24
1.3.2 Transfer and Stacking of 2D layers 26
1.3.3 Electrode Formation and Contact Engineering 28
1.4 Characterization of Photodetector 29
1.4.1 Electrical Characterization 30
1.4.2 Optical Characterization 31
1.4.3 Figures of Merit and Performance Parameters 32
2. Floating-Base Bipolar Junction (FBBJ): Gated Electrostatic Band Modulation
2.1 Introduction 35
2.2 Experimental section 38
2.3 Result and Discussion 41
2.3.1 Overview of a Floating—Base Bipolar Junction phototransistor 41
2.3.2 Electrostatic Doping—Induced Band Structure Analysis of FBBJ 44
2.3.3 Tunable photoresponse mediated by interfacial barrier—matching transition 53
2.3.4 Electrostatic Doping-Induced Spectral Response and Computational Spectrometer of
the FBBJ Device 62
2.4 Conclusion 66
3. WSe2/h-BN/CdSe QD/Graphene Tunneling Photodetector: Interfacial Barrier Engineering
3.1 Introduction 68
3.2 Result and discussion 70
3.2.1 Device Structure and Materials 70
3.2.2 In-depth analysis and understanding of the tunneling phenomena 75
3.2.3 Optical property for validating the tunneling 81
3.2.4 Photodetector application 87
3.4 Conclusion 91
4. Ion-Beam-Doped WSe2 Homojunction: Intrinsic Band Engineering via Controlled Doping
4.1 Introduction 92
4.2 Result and Discussion 96
4.2.1 Device Fabrication Process 96
4.2.2 Defect Characterization of Ion-Beam-Treated WSe2 97
3.2.3 Transport Characteristics of the Ion-Beam-Induced Lateral p–n Junction· 101
4.2.4 Photodetector application 104
4.3 Conclusion 108		 -
dc.format.extent 119 -
dc.language eng -
dc.publisher DGIST -
dc.title Band Structure Engineering for Optimal Optoelectronic Device -
dc.title.alternative 광전자소자 최적화를 위한 밴드 구조 엔지니어링 -
dc.type Thesis -
dc.identifier.doi 10.22677/THESIS.200001006998 -
dc.description.degree Doctor -
dc.contributor.department Department of Energy Science and Engineering -
dc.contributor.coadvisor Youngwook Kim -
dc.date.awarded 2026-08-01 -
dc.publisher.location Daegu -
dc.description.database dCollection -
dc.citation XT.ED 이52 202608 -
dc.date.accepted 2026-07-21 -
dc.contributor.alternativeDepartment 에너지공학과 -
dc.subject.keyword 2D materials, Optoelectric device, Low-dimensional materials, Tunneling device, Computational Spectrometer, Defect engineering -
dc.contributor.affiliatedAuthor Sang-Hyeon Lee -
dc.contributor.affiliatedAuthor Jong-Soo Lee -
dc.contributor.affiliatedAuthor Youngwook Kim -
dc.contributor.alternativeName 이상현 -
dc.contributor.alternativeName Jong-Soo Lee -
dc.contributor.alternativeName 김영욱 -
dc.rights.embargoReleaseDate 2031-08-31 -
Show Simple Item Record

File Downloads

  • There are no files associated with this item.

공유

qrcode
공유하기

Total Views & Downloads

???jsp.display-item.statistics.view???: , ???jsp.display-item.statistics.download???: