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Interface engineering of IGZO/TiO2 heterostructure for UV driven analog memristive dynamics in in-sensor reservoir computing

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dc.contributor.author Ghafoor, Faisal -
dc.contributor.author Patil, Harshada -
dc.contributor.author Kim, Honggyun -
dc.contributor.author Gao, Lili -
dc.contributor.author Li, Zhenting -
dc.contributor.author Lee, Myoung-jae -
dc.contributor.author Shi, Tuo -
dc.contributor.author Kim, Deok-kee -
dc.date.accessioned 2026-10-15T15:10:11Z -
dc.date.available 2026-10-15T15:10:11Z -
dc.date.created 2026-09-10 -
dc.date.issued 2026-08 -
dc.identifier.issn 2588-8420 -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/60964 -
dc.description.abstract Conventional machine vision systems face critical limitations, including substantial data latency and elevated energy consumption, due to the physical separation of memory, sensing, and processing units. In contrast, in-sensor computing, particularly using optoelectronic synapses, offers a promising paradigm shift by enabling direct sensing and processing of optical signals, thereby enhancing efficiency. Light-sensitive photodetectors exhibiting history-dependent dynamic responses further advance this field by facilitating temporal vision processing and time-series prediction without complex circuitry or excessive power demands. Recent approaches aim to emulate biologically inspired vision using light-modulated memristive behaviors. However, accurate realtime analog optical signal processing remains a significant challenge, necessitating the development of a photonic analog to electrically driven memristors. In this study, we introduce an optoelectronic synaptic device based on a TiO2/IGZO heterostructure, where ultraviolet (UV) photon flux triggers memristive behavior. We analyze photoexcited oxygen-vacancy (VO-) related defect states and activation energies to elucidate the correlation between photocarrier relaxation dynamics and optical synaptic behavior. The device demonstrates high recognition accuracy 98.01% (MNIST), 88.07% (FMNIST), and 96.10% (Weizmann dataset) within a 4-bit reservoir computing framework, highlighting its potential as an energy-efficient, cost-effective solution for real-time spatiotemporal optical signal processing in next-generation machine vision systems. -
dc.language English -
dc.publisher ELSEVIER -
dc.title Interface engineering of IGZO/TiO2 heterostructure for UV driven analog memristive dynamics in in-sensor reservoir computing -
dc.type Article -
dc.identifier.doi 10.1016/j.mtnano.2026.100929 -
dc.identifier.wosid 001861848600001 -
dc.identifier.scopusid 2-s2.0-105048337453 -
dc.identifier.bibliographicCitation MATERIALS TODAY NANO, v.35 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Activation energy -
dc.subject.keywordAuthor UV-Induced memristor -
dc.subject.keywordAuthor Photonic synapse -
dc.subject.keywordAuthor In-sensor reservoir computing -
dc.subject.keywordAuthor Oxide semiconductors (TiO2/IGZO) -
dc.subject.keywordPlus PERSISTENT PHOTOCONDUCTIVITY -
dc.citation.title MATERIALS TODAY NANO -
dc.citation.volume 35 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.type.docType Article -
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