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Ion-Pair DesignRules for Defect Passivation in 2DWS2
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Thakur, Deepa | - |
| dc.contributor.author | Araujo, Rafael B. | - |
| dc.contributor.author | Kim, Bora | - |
| dc.contributor.author | Aboulsaad, Mustafa Mahmoud | - |
| dc.contributor.author | Thyr, Jakob | - |
| dc.contributor.author | Guo, Jiaxin | - |
| dc.contributor.author | Balakrishnan, Viswanath | - |
| dc.contributor.author | Sung, Jooyoung | - |
| dc.contributor.author | Edvinsson, Tomas | - |
| dc.contributor.author | Li, Zhaojun | - |
| dc.date.accessioned | 2026-10-19T13:40:20Z | - |
| dc.date.available | 2026-10-19T13:40:20Z | - |
| dc.date.created | 2026-09-10 | - |
| dc.date.issued | 2026-09 | - |
| dc.identifier.issn | 1948-7185 | - |
| dc.identifier.uri | https://scholar.dgist.ac.kr/handle/20.500.11750/60971 | - |
| dc.description.abstract | Two-dimensional (2D) semiconductors hold great promise for next-generation optoelectronics; however, device performance is frequently limited by intrinsic defects. In monolayer WS2, sulfur vacancies strongly quench optical emission, while existing chemical passivation strategies remain largely empirical. Here, we establish ion-pair interactions as a predictive design principle for lithium-based chemical passivation. Systematic comparison of lithium salts reveals that weaker Li+-anion interactions increase the effective availability of Li+ for vacancy binding and enhance photoluminescence (PL), which is further supported by low-temperature PL and femtosecond transient absorption (fs-TA) measurements. Density functional theory (DFT) calculations reveal that strong ion-pair formation counteracts passivation, directly linking ion-pair interaction energies to the experimentally observed PL trends. Guided by this framework, we predict and experimentally validate lithium bis(pentafluoroethylsulfonyl)imide (Li-BETI) as a new passivation agent that matches or exceeds the performance of Li-TFSI. Together, these findings establish molecular-level chemical design rules for defect passivation in 2D semiconductors. | - |
| dc.language | English | - |
| dc.publisher | AMER CHEMICAL SOC | - |
| dc.title | Ion-Pair DesignRules for Defect Passivation in 2DWS2 | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1021/acs.jpclett.6c02371 | - |
| dc.identifier.wosid | 001856131400001 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.17, no.35, pp.10105 - 10114 | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.subject.keywordPlus | YIELD | - |
| dc.citation.endPage | 10114 | - |
| dc.citation.number | 35 | - |
| dc.citation.startPage | 10105 | - |
| dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY LETTERS | - |
| dc.citation.volume | 17 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Atomic, Molecular & Chemical | - |
| dc.type.docType | Article | - |
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