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Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se-2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors
- Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se-2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors
- Koo, Jaseok; Kim, Sam Mi; Cheon, Tae Hoon; Kim, Soo-Hyun; Kim, Woo Kyoung
- Issue Date
- Scientific Reports, 8
- Article Type
- Film Solar-Cells; Mose2 Layer; Selenization; Modules
- Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe2 and Cu(InGa)Se2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min. © 2018 The Author(s).
- NATURE PUBLISHING GROUP
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