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Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se-2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors

Title
Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se-2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors
Authors
Koo, JaseokKim, Sam MiCheon, Tae HoonKim, Soo-HyunKim, Woo Kyoung
Issue Date
2018-03
Citation
Scientific Reports, 8
Type
Article
Article Type
Article
Keywords
Film Solar-CellsMose2 LayerSelenizationModules
ISSN
2045-2322
Abstract
Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe2 and Cu(InGa)Se2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min. © 2018 The Author(s).
URI
http://hdl.handle.net/20.500.11750/6155
DOI
10.1038/s41598-018-22214-y
Publisher
NATURE PUBLISHING GROUP
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