Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Ho Jun | ko |
dc.contributor.author | Jeong, Woo Seong | ko |
dc.contributor.author | Lee, Sung Won | ko |
dc.contributor.author | Moon, Geon Dae | ko |
dc.date.accessioned | 2018-04-29T06:39:11Z | - |
dc.date.available | 2018-04-29T06:39:11Z | - |
dc.date.created | 2018-04-27 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.citation | Nanoscale, v.10, no.12, pp.5424 - 5430 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/6212 | - |
dc.description.abstract | We demonstrated a flexible resistive switching device based on ultrathin Ag2Te nanowire (NW) films and Au nanosheet (NS) electrodes by exploiting a monolayer assembly on the water surface for macroscale two-dimensional structures. Firstly, ultrathin TeNWs (diameter ≈ 10 nm) are rapidly assembled on the water surface as a form of monolayer and transferred to fabricate TeNW films on various substrates with any available size. An assembled TeNW film was used as a template to produce a Ag2TeNW film through chemical transformation. A well-aligned Ag2TeNW film device showed reversible resistive switching properties when the Ag composition of the silver telluride NW becomes stoichiometric Ag2Te. Additionally, a non-stoichiometric Ag2+δTeNW film shows an increased On/Off ratio. For a flexible memory device, ultrathin AuNSs (thickness ≤20 nm) were adopted as working electrodes, since thermally deposited gold electrodes tend to crack under strain, which can fail to maintain the electrical properties. A paper-like flexibility of AuNS proved its capability as optimal electrodes of ultrathin Ag2TeNW film-based resistive memory devices. © 2018 The Royal Society of Chemistry. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Ultrathin silver telluride nanowire films and gold nanosheet electrodes for a flexible resistive switching device | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c8nr01429a | - |
dc.identifier.wosid | 000428787600002 | - |
dc.identifier.scopusid | 2-s2.0-85044263060 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Seo, Ho Jun | - |
dc.contributor.nonIdAuthor | Moon, Geon Dae | - |
dc.identifier.citationVolume | 10 | - |
dc.identifier.citationNumber | 12 | - |
dc.identifier.citationStartPage | 5424 | - |
dc.identifier.citationEndPage | 5430 | - |
dc.identifier.citationTitle | Nanoscale | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | MONOLAYERS | - |
dc.subject.keywordPlus | STORAGE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.contributor.affiliatedAuthor | Lee, Sung Won | - |
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