Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kwon, Sung Min | - |
dc.contributor.author | Won, Jong Kook | - |
dc.contributor.author | Jo, Jeong-Wan | - |
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Kim, Hee-Joong | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Ahn, Sangdoo | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Lee, Myoung Jae | - |
dc.contributor.author | Lee, Hyung-ik | - |
dc.contributor.author | Marks, Tobin J. | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2018-05-06T03:54:00Z | - |
dc.date.available | 2018-05-06T03:54:00Z | - |
dc.date.created | 2018-05-04 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/6290 | - |
dc.description.abstract | We report a general strategy for obtaining high-quality, large-areametal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels,which are easily transformed into the corresponding highperformance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQx: M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In2Se3 active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm2 V-1 s-1 with an on/off current ratio of >107 and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition,metal chalcogenide-based phototransistors with a photodetectivity of >1013 Jones and seven-stage ring oscillators operating at a speed of ∼2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated. © 2018 The Authors. | - |
dc.language | English | - |
dc.publisher | American Association for the Advancement of Science | - |
dc.title | High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1126/sciadv.aap9104 | - |
dc.identifier.scopusid | 2-s2.0-85045750289 | - |
dc.identifier.bibliographicCitation | Science Advances, v.4, no.4 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | CDSE NANOCRYSTALS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | TFT | - |
dc.citation.number | 4 | - |
dc.citation.title | Science Advances | - |
dc.citation.volume | 4 | - |