Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Byeong-Hyeok | - |
dc.contributor.author | Kim, Min-Woo | - |
dc.contributor.author | Kang, Jang Won | - |
dc.contributor.author | Choi, Yong-Seok | - |
dc.contributor.author | Kim, Bong-Joong | - |
dc.contributor.author | Park, Seong-Ju | - |
dc.date.accessioned | 2018-05-25T08:34:38Z | - |
dc.date.available | 2018-05-25T08:34:38Z | - |
dc.date.created | 2018-05-25 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.citation | Journal of Alloys and Compounds, v.757, pp.98 - 104 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/6413 | - |
dc.description.abstract | We report on the electrical properties of columnar Sb-doped MgZnO (MgZnO:Sb) films grown by metalorganic chemical vapor deposition (MOCVD). Hall effect and C–V measurements showed different carrier types and concentrations in the columnar MgZnO:Sb film. The Hall effect measurements showed both n-type and p-type conductivity randomly across repeated measurements. In contrast, the C–V measurements showed only p-type conductivity across repeated measurements, and the hole concentration was estimated to be 1.46 × 1019 cm−3. We show that carrier type and concentration in columnar MgZnO:Sb films should be measured vertically rather than laterally due to the large defect scattering at the grain boundaries of the columnar structures. © 2018 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier BV | - |
dc.title | Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jallcom.2018.05.023 | - |
dc.identifier.wosid | 000433609100013 | - |
dc.identifier.scopusid | 2-s2.0-85046710230 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | Journal of Alloys and Compounds | - |
dc.contributor.nonIdAuthor | Kim, Byeong-Hyeok | - |
dc.contributor.nonIdAuthor | Kim, Min-Woo | - |
dc.contributor.nonIdAuthor | Choi, Yong-Seok | - |
dc.contributor.nonIdAuthor | Kim, Bong-Joong | - |
dc.contributor.nonIdAuthor | Park, Seong-Ju | - |
dc.identifier.citationVolume | 757 | - |
dc.identifier.citationStartPage | 98 | - |
dc.identifier.citationEndPage | 104 | - |
dc.identifier.citationTitle | Journal of Alloys and Compounds | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Oxide materials | - |
dc.subject.keywordAuthor | Semiconductor | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Electronic properties | - |
dc.subject.keywordAuthor | Grain boundary | - |
dc.subject.keywordPlus | P-TYPE CONDUCTIVITY | - |
dc.subject.keywordPlus | ZNO THIN-FILMS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | BOUNDARIES | - |
dc.subject.keywordPlus | TRANSPORTEMISSION | - |
dc.subject.keywordPlus | GA | - |
dc.contributor.affiliatedAuthor | Kim, Byeong-Hyeok | - |
dc.contributor.affiliatedAuthor | Kim, Min-Woo | - |
dc.contributor.affiliatedAuthor | Kang, Jang Won | - |
dc.contributor.affiliatedAuthor | Choi, Yong-Seok | - |
dc.contributor.affiliatedAuthor | Kim, Bong-Joong | - |
dc.contributor.affiliatedAuthor | Park, Seong-Ju | - |
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