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Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement
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dc.contributor.author Kim, Dong Hwan ko
dc.contributor.author Kim, Cham ko
dc.contributor.author Kim, Jong Tae ko
dc.contributor.author Yoon, Duck Ki ko
dc.contributor.author Kim, Hoyoung ko
dc.date.accessioned 2018-08-17T04:13:44Z -
dc.date.available 2018-08-17T04:13:44Z -
dc.date.created 2018-07-31 -
dc.date.issued 2018-12 -
dc.identifier.citation Measurement: Journal of the International Measurement Confederation, v.129, pp.281 - 287 -
dc.identifier.issn 0263-2241 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/9064 -
dc.description.abstract Research on the methodology for predicting and analyzing the performance of a thermoelectric device (TED) can offer various possibilities for enhancing its energy conversion characteristics. In this work, the methodology to determine the electrical contact resistance and the interfacial thermal resistance of a TED was studied. Based on one-dimensional heat transfer equations of power generation mode that includes electrical contact resistance and interfacial thermal resistance, we derived explicit expressions for the open circuit voltage and the short circuit current as the limiting cases of the external electrical load. The measurements of the open circuit voltage and the short-circuit current of TED were carried out for various thermal interface materials (TIMs) between the TED and heat reservoirs under varying compressive forces. The electrical contact resistance and the interfacial thermal resistance of a TED were determined by matching the measured values of the open circuit voltage and the short circuit current of a TED to the results of the analytic model. The electrical contact resistivity of the TED tested was approximately 3 × 10−9 Ωm2, irrespective of the compressive force, the hot-side temperature, and the TIMs. The interfacial thermal resistance varied sensitively with the TIMs and decreased with the compressive forces. © 2018 Elsevier Ltd -
dc.language English -
dc.publisher Elsevier B.V. -
dc.subject Contact resistance -
dc.subject Current voltage characteristics -
dc.subject Electric contacts -
dc.subject Energy conversion -
dc.subject Heat transfer -
dc.subject Open circuit voltage -
dc.subject Power generation -
dc.subject Short circuit currents -
dc.subject Thermal insulating materials -
dc.subject Thermoelectric energy conversion -
dc.subject Conversion characteristics -
dc.subject Electrical contact resistance -
dc.subject Interfacial resistances -
dc.subject Interfacial thermal resistance -
dc.subject One-dimensional heat -
dc.subject Predicting and analyzing -
dc.subject Thermal interface materials -
dc.subject Thermoelectric devices -
dc.subject Heat resistance -
dc.title Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement -
dc.type Article -
dc.identifier.doi 10.1016/j.measurement.2018.07.030 -
dc.identifier.wosid 000443834700028 -
dc.identifier.scopusid 2-s2.0-85050002457 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.identifier.bibliographicCitation Kim, Dong Hwan. (2018-12). Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement. doi: 10.1016/j.measurement.2018.07.030 -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Yoon, Duck Ki -
dc.identifier.citationVolume 129 -
dc.identifier.citationStartPage 281 -
dc.identifier.citationEndPage 287 -
dc.identifier.citationTitle Measurement: Journal of the International Measurement Confederation -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.contributor.affiliatedAuthor Kim, Dong Hwan -
dc.contributor.affiliatedAuthor Kim, Cham -
dc.contributor.affiliatedAuthor Kim, Hoyoung -
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김동환
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