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Subfemtosecond charge driving with correlation-assisted band engineering in a wide-gap semiconductor

Title
Subfemtosecond charge driving with correlation-assisted band engineering in a wide-gap semiconductor
Authors
Kim, YoungjaeLee, JaeDong
DGIST Authors
Kim, Youngjae; Lee, JaeDong
Issue Date
2018-11
Citation
Physical Review B, 98(19), 195135
Type
Article
Article Type
Article
Keywords
REAL-TIME OBSERVATIONATTOSECONDATOM
ISSN
2469-9950
Abstract
First-principles calculations indicate that, before falling into dielectric breakdown, charge transport induced by a strong-intensity few-cycle optical waveform in the subfemtosecond time domain can be precisely controlled depending on band distortion engineered by strain along the [0001] direction in wurtzite-AlN. It is further discovered from a model of electron-hole interaction that the subfemtosecond charge driving with band engineering can be substantially strengthened by excitonic correlation and dynamics. With these findings, we reveal band engineering to be a route to the ultrafast charge control of semiconductors and indeed suggest an unexplored prototype of solid-state petahertz (1015Hz) device. © 2018 American Physical Society.
URI
http://hdl.handle.net/20.500.11750/9508
DOI
10.1103/PhysRevB.98.195135
Publisher
American Physical Society
Related Researcher
  • Author Lee, JaeDong Light and Matter Theory Laboratory
  • Research Interests Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
Files:
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Collection:
Department of Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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