Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Cham | ko |
dc.contributor.author | Yang, Yeokyung | ko |
dc.contributor.author | Baek, Ju Young | ko |
dc.contributor.author | Lopez, David Humberto | ko |
dc.contributor.author | Kim, Dong Hwan | ko |
dc.contributor.author | Kim, Hoyoung | ko |
dc.date.accessioned | 2019-03-29T02:34:51Z | - |
dc.date.available | 2019-03-29T02:34:51Z | - |
dc.date.created | 2019-03-28 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | Nano Energy, v.60, pp.26 - 35 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/9681 | - |
dc.description.abstract | We suggested a defect system consisting of Te- and Ag-related defects in n-type Bi 2 (Te,Se) 3 . We prepared the Te-rich Bi 2 Te 2.88 Se 0.15 compound, which is expected to have Te antisite defects, via a conventional pulverization process. We devised a one-pot chemical process in which Ag nanoparticles were synthesized and instantly deposited onto the Bi 2 Te 2.88 Se 0.15 , followed by spark plasma sintering; thus, Ag atoms were inserted into the lattice structure of the Bi 2 Te 2.88 Se 0.15 during the sintering process. Atomic layers of the Bi 2 Te 2.88 Se 0.15 were resolved by transmission electron microscopy and dark-field scanning electron microscopy imaging with energy dispersive X-ray spectroscopy; the Ag atoms were thereby proven to occupy the interstitial sites in the Bi 2 Te 2.88 Se 0.15 (i.e., Ag interstitial defects). The defect system composed of the Te antisites and Ag interstitials decoupled the electrical properties of the Bi 2 Te 2.88 Se 0.15 from its thermal properties. We endeavored to adjust the defect system to maximize the decoupling effect, which resulted in the preeminent average figures of merit for operation below 150 °C (ZT ave = 1.22 at 25–100 °C and 1.18 at 25–150 °C) among n-type Bi 2 (Te,Se) 3 materials. © 2019 Elsevier Ltd | - |
dc.language | English | - |
dc.publisher | Elsevier BV | - |
dc.title | Concurrent defects of intrinsic tellurium and extrinsic silver in an n-type Bi2Te2.88Se0.15 thermoelectric material | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.nanoen.2019.03.047 | - |
dc.identifier.wosid | 000467774100004 | - |
dc.identifier.scopusid | 2-s2.0-85062913389 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Lopez, David Humberto | - |
dc.identifier.citationVolume | 60 | - |
dc.identifier.citationStartPage | 26 | - |
dc.identifier.citationEndPage | 35 | - |
dc.identifier.citationTitle | Nano Energy | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Thermoelectric material | - |
dc.subject.keywordAuthor | Bi2Te3 | - |
dc.subject.keywordAuthor | Defect | - |
dc.subject.keywordAuthor | Antisite | - |
dc.subject.keywordAuthor | Interstitial | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | POWER | - |
dc.contributor.affiliatedAuthor | Kim, Cham | - |
dc.contributor.affiliatedAuthor | Kim, Dong Hwan | - |
dc.contributor.affiliatedAuthor | Kim, Hoyoung | - |
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