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Title
GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction
DGIST Authors
Jung, Minkyung
Issued Date
2019-03
Citation
Jung, Minkyung. (2019-03). GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction. doi: 10.1039/c8nr09963d
Type
Article
Article Type
Article
Keywords
AnnealingBallisticsGrapheneResonatorsSemiconductor junctionsCurrent annealingGraphene p-n junctionsMacroscopic sizesMechanical resonatorsNanomechanical resonatorsResonance frequenciesResonance responseSuspended grapheneGraphene devices
ISSN
2040-3364
Abstract
We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, but still of macroscopic size with dimensions 3 × 1 μm 2 , a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Remarkably, the resonant signals are strongly enhanced in the bipolar regime. © 2019 The Royal Society of Chemistry.
URI
http://hdl.handle.net/20.500.11750/9695
DOI
10.1039/c8nr09963d
Publisher
Royal Society of Chemistry
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