Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Youngjae | - |
dc.contributor.author | Lee, JaeDong | - |
dc.date.accessioned | 2019-04-10T06:36:52Z | - |
dc.date.available | 2019-04-10T06:36:52Z | - |
dc.date.created | 2019-04-04 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | Physical Review Applied, v.11, no.3 | - |
dc.identifier.issn | 2331-7019 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/9740 | - |
dc.description.abstract | Suggesting the AB-stacked bilayer WS2/MoS2 heterostructure as an ideal architecture for Berry curvature engineering, we theoretically demonstrate that it is possible to manipulate valley polarizations at K and -K valleys on each layer in a distinguishable fashion and then attempt an operation using four channels of valley manipulations, that is, four pairwise incorporations of KWS2 and (-K)WS2, KMoS2 and (-K)MoS2,KWS2 and KMoS2, and (-K)WS2 and (-K)MoS2, within a frame of the electro-optic method. Four-channel valley manipulation, which provokes varied anomalous Lorentz effects, conveys a development of multimode inverse valley Hall currents comprising two intralayer and one interlayer modes, each of which has a different nonlocal resistance. This finding proposes an alternative discipline of valley valve of valleytronics to manage a variable (multilevel) nonlocal resistance to the valley-mediated nonlocal charge current, in analogy with the spin valve of spintronics. © 2019 American Physical Society. | - |
dc.language | English | - |
dc.publisher | American Physical Society | - |
dc.title | Proposed Valley Valve from Four-Channel Valley Manipulation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1103/PhysRevApplied.11.034048 | - |
dc.identifier.wosid | 000461928800001 | - |
dc.identifier.scopusid | 2-s2.0-85063351076 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | Physical Review Applied | - |
dc.contributor.nonIdAuthor | Kim, Youngjae | - |
dc.identifier.citationVolume | 11 | - |
dc.identifier.citationNumber | 3 | - |
dc.identifier.citationTitle | Physical Review Applied | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordPlus | Layered semiconductors | - |
dc.subject.keywordPlus | Molybdenum compounds | - |
dc.subject.keywordPlus | Tungsten compounds | - |
dc.subject.keywordPlus | Bi-layer | - |
dc.subject.keywordPlus | Charge current | - |
dc.subject.keywordPlus | Four-channel | - |
dc.subject.keywordPlus | Hall current | - |
dc.subject.keywordPlus | Intra-layer | - |
dc.subject.keywordPlus | Lorentz effects | - |
dc.subject.keywordPlus | Multimodes | - |
dc.subject.keywordPlus | Spin valve | - |
dc.subject.keywordPlus | Landforms | - |
dc.contributor.affiliatedAuthor | Kim, Youngjae | - |
dc.contributor.affiliatedAuthor | Lee, JaeDong | - |
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