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Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications

Title
Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications
Authors
Hyun, Cheol-MinChoi, Jeong-HunLee, Seung WonSeo, Seung-YoungLee, Myoung-JaeKwon, Se-HunAhn, Ji-Hoon
DGIST Authors
Lee, Myoung-Jae
Issue Date
2019-04
Citation
Crystal Growth and Design, 19(4), 2024-2029
Type
Article
Article Type
Article
Keywords
BISMUTH-TELLURIDEDEPOSITION GROWTHATOMIC LAYERSTHIN-FILMSNANOWIRES
ISSN
1528-7483
Abstract
Bismuth telluride (Bi 2 Te 3 ) has recently attracted significant attention owing to its unique physical properties as a three-dimensional topological insulator and excellent properties as a thermoelectric material. Meanwhile, it is important to develop a synthesis process yielding high-quality single crystals over a large area to study the inherent physical properties and device applications of two-dimensional materials. However, the maturity of Bi 2 Te 3 vapor-phase synthesis is not good, compared to those of other semiconductor two-dimensional crystals. In this study, therefore, we report the synthesis of relatively large-area Bi 2 Te 3 crystals by vapor transport method, and we investigated the key process parameters for a synthesis of relatively thin and large-area Bi 2 Te 3 crystals. The most important factor determining the crystal synthesis was the temperature of the substrate. A Bi 2 Te 3 device exhibited a considerable photocurrent when the laser was irradiated inside the electrode area. This indicated that the photo-thermoelectric effect was the main mechanism of generation of photocurrent. The estimated Seebeck coefficient of the device was ∼196 μV/K, which is comparable to the previously reported high Seebeck coefficient of Bi 2 Te 3 . This synthesis method can guide the development and applications of various types of layered crystals with the space group of R3̄m. © Copyright 2019 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/9749
DOI
10.1021/acs.cgd.8b01931
Publisher
American Chemical Society
Related Researcher
Files:
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Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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