WEB OF SCIENCE
SCOPUS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jo, Sunghwan | - |
| dc.contributor.author | Jung, Jin-Woo | - |
| dc.contributor.author | Baik, Jaeyoung | - |
| dc.contributor.author | Kang, Jang-Won | - |
| dc.contributor.author | Park, Il-Kyu | - |
| dc.contributor.author | Bae, Tae-Sung | - |
| dc.contributor.author | Chung, Hee-Suk | - |
| dc.contributor.author | Cho, Chang-Hee | - |
| dc.date.accessioned | 2019-05-28T07:47:10Z | - |
| dc.date.available | 2019-05-28T07:47:10Z | - |
| dc.date.created | 2019-05-20 | - |
| dc.date.issued | 2019-05 | - |
| dc.identifier.issn | 2040-3364 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/9855 | - |
| dc.description.abstract | Atomically thin transition metal dichalcogenides (TMDs) have recently attracted great attention since the unique and fascinating physical properties have been found in various TMDs, implying potential applications in next-generation devices. The progress towards developing new functional and high-performance devices based on TMDs, however, is limited by the difficulty in producing large-area monolayer TMDs due to a lack of knowledge of the growth processes of monolayer TMDs. In this work, we have investigated the growth processes of monolayer WS 2 crystals using a thermal chemical vapor deposition method, in which the growth conditions were adjusted in a systematic manner. It was found that, after forming WO 3 -WS 2 core-shell nanoparticles as nucleation sites on a substrate, the growth of three-dimensional WS 2 islands proceeds by ripening and crystallization processes. Lateral growth of monolayer WS 2 crystals subsequently occurs by the surface diffusion process of adatoms toward the step edge of the three-dimensional WS 2 islands. Our results provide understanding of the growth processes of monolayer WS 2 by using chemical vapor deposition methods. © 2019 The Royal Society of Chemistry. | - |
| dc.language | English | - |
| dc.publisher | Royal Society of Chemistry | - |
| dc.title | Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1039/c9nr01594a | - |
| dc.identifier.wosid | 000469245300006 | - |
| dc.identifier.scopusid | 2-s2.0-85065584496 | - |
| dc.identifier.bibliographicCitation | Jo, Sunghwan. (2019-05). Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei. Nanoscale, 11(18), 8706–8714. doi: 10.1039/c9nr01594a | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
| dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
| dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
| dc.subject.keywordPlus | MOS2 | - |
| dc.subject.keywordPlus | WSE2 | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | MONOLAYERS | - |
| dc.subject.keywordPlus | PROGRESS | - |
| dc.citation.endPage | 8714 | - |
| dc.citation.number | 18 | - |
| dc.citation.startPage | 8706 | - |
| dc.citation.title | Nanoscale | - |
| dc.citation.volume | 11 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
| dc.type.docType | Article | - |