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dc.contributor.author Jo, Sunghwan ko
dc.contributor.author Jung, Jin-Woo ko
dc.contributor.author Baik, Jaeyoung ko
dc.contributor.author Kang, Jang-Won ko
dc.contributor.author Park, Il-Kyu ko
dc.contributor.author Bae, Tae-Sung ko
dc.contributor.author Chung, Hee-Suk ko
dc.contributor.author Cho, Chang-Hee ko
dc.date.accessioned 2019-05-28T07:47:10Z -
dc.date.available 2019-05-28T07:47:10Z -
dc.date.created 2019-05-20 -
dc.date.issued 2019-05 -
dc.identifier.citation Nanoscale, v.11, no.18, pp.8706 - 8714 -
dc.identifier.issn 2040-3364 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/9855 -
dc.description.abstract Atomically thin transition metal dichalcogenides (TMDs) have recently attracted great attention since the unique and fascinating physical properties have been found in various TMDs, implying potential applications in next-generation devices. The progress towards developing new functional and high-performance devices based on TMDs, however, is limited by the difficulty in producing large-area monolayer TMDs due to a lack of knowledge of the growth processes of monolayer TMDs. In this work, we have investigated the growth processes of monolayer WS 2 crystals using a thermal chemical vapor deposition method, in which the growth conditions were adjusted in a systematic manner. It was found that, after forming WO 3 -WS 2 core-shell nanoparticles as nucleation sites on a substrate, the growth of three-dimensional WS 2 islands proceeds by ripening and crystallization processes. Lateral growth of monolayer WS 2 crystals subsequently occurs by the surface diffusion process of adatoms toward the step edge of the three-dimensional WS 2 islands. Our results provide understanding of the growth processes of monolayer WS 2 by using chemical vapor deposition methods. © 2019 The Royal Society of Chemistry. -
dc.language English -
dc.publisher Royal Society of Chemistry -
dc.title Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei -
dc.type Article -
dc.identifier.doi 10.1039/c9nr01594a -
dc.identifier.wosid 000469245300006 -
dc.identifier.scopusid 2-s2.0-85065584496 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.contributor.nonIdAuthor Park, Il-Kyu -
dc.contributor.nonIdAuthor Bae, Tae-Sung -
dc.contributor.nonIdAuthor Chung, Hee-Suk -
dc.identifier.citationVolume 11 -
dc.identifier.citationNumber 18 -
dc.identifier.citationStartPage 8706 -
dc.identifier.citationEndPage 8714 -
dc.identifier.citationTitle Nanoscale -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus LIGHT-EMITTING-DIODES -
dc.subject.keywordPlus EPITAXIAL-GROWTH -
dc.subject.keywordPlus MOS2 -
dc.subject.keywordPlus WSE2 -
dc.subject.keywordPlus PHOTOLUMINESCENCE -
dc.subject.keywordPlus MONOLAYERS -
dc.subject.keywordPlus PROGRESS -
dc.contributor.affiliatedAuthor Kang, Jang-Won -
dc.contributor.affiliatedAuthor Cho, Chang-Hee -

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