Cited time in webofscience Cited time in scopus

Full metadata record

DC Field Value Language
dc.contributor.author Aly, Amir Ibrahim Elzawawy ko
dc.contributor.author Kim, SungJoon ko
dc.contributor.author Talantsev, Artem ko
dc.contributor.author Kim, CheolGi ko
dc.date.accessioned 2019-05-29T02:43:57Z -
dc.date.available 2019-05-29T02:43:57Z -
dc.date.created 2019-05-28 -
dc.date.issued 2019-07 -
dc.identifier.citation Journal of Physics D: Applied Physics, v.52, no.28, pp.285001 -
dc.identifier.issn 0022-3727 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/9863 -
dc.description.abstract A novel technique of operating field range adjustment using varying thicknesses of spacer and capping layers is proposed for planar Hall effect (PHE) magnetic sensors. In terms of this technique, the spacer and capping layer thicknesses are varied interdependently, in a way that the variation of the operating magnetic field range is performed without a change of sensitivity. The relationship between the thicknesses of spacer and capping layers required for this 'equisensitive' variation of field range are calculated and experimentally approved. The active layer material substitution effect on the performance of PHE sensor is studied. The sensitivity, output voltage, operating field range, and shunt current are compared for PHE sensors, based on NiFe and NiFeMo active ferromagnetic layers. The NiFe/IrMn and NiFeMo/IrMn interface coupling energies are compared and the effect of IrMn crystallinity on their difference is discussed. The range of active layer thicknesses, at which the operating field range can be varied while maintaining the sensitivity at the same value, has been determined. © 2019 IOP Publishing Ltd. -
dc.language English -
dc.publisher Institute of Physics Publishing -
dc.title Equisensitive adjustment of planar Hall effect sensor's operating field range by material and thickness variation of active layers -
dc.type Article -
dc.identifier.doi 10.1088/1361-6463/ab18f2 -
dc.identifier.wosid 000467461400001 -
dc.identifier.scopusid 2-s2.0-85067333833 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.identifier.citationVolume 52 -
dc.identifier.citationNumber 28 -
dc.identifier.citationStartPage 285001 -
dc.identifier.citationTitle Journal of Physics D: Applied Physics -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.subject.keywordAuthor planar Hall effect -
dc.subject.keywordAuthor operating field range -
dc.subject.keywordAuthor sensitivity -
dc.subject.keywordAuthor output voltage -
dc.subject.keywordAuthor shunt current -
dc.subject.keywordAuthor interface coupling -
dc.subject.keywordAuthor magnetic sensors -
dc.subject.keywordPlus ANISOTROPIC MAGNETORESISTANCE -
dc.subject.keywordPlus EXCHANGE BIAS -
dc.subject.keywordPlus NI81FE19 -
dc.subject.keywordPlus INTERFACE -
dc.subject.keywordPlus FILMS -
dc.contributor.affiliatedAuthor Kim, CheolGi -
Files in This Item:

There are no files associated with this item.

Appears in Collections:
Department of Physics and Chemistry Lab for NanoBio-Materials & SpinTronics(nBEST) 1. Journal Articles

qrcode

  • twitter
  • facebook
  • mendeley

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE