Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Jeong-Wan | ko |
dc.contributor.author | Kim, Kyung-Tae | ko |
dc.contributor.author | Park, Ho-Hyun | ko |
dc.contributor.author | Park, Sung Kyu | ko |
dc.contributor.author | Heo, Jae Sang | ko |
dc.contributor.author | Kim, Insoo | ko |
dc.contributor.author | Lee, Myoung-Jae | ko |
dc.date.accessioned | 2019-06-21T02:55:48Z | - |
dc.date.available | 2019-06-21T02:55:48Z | - |
dc.date.created | 2019-06-13 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | Journal of the Korean Physical Society, v.74, no.11, pp.1052 - 1058 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/9989 | - |
dc.description.abstract | An efficient photo-annealing approach for high-performance solution-processed metal-oxide thin film transistors (TFTs) was demonstrated by using programmable pulse operation of xenon flash lamp. The flash lamp annealing (FLA) process could offer not only low-temperature (≈100° C) processing but also ultra-fast annealing speed of the order of seconds under air ambient conditions. Solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) TFTs implemented by the FLA process typically exhibited much improved electrical performance such as saturation mobility of >10.8 cm2V−11s−1, ION/IOPP of >108, and subthreshold slope of as steep as 0.24 V/dec. X-ray photoelectron spectroscopy analysis of a-IGZO films indicates that the FLA can provide sufficient activation energy for rapid formation of solid a-IGZO bonds within 30 s. The high-quality metal-oxide films achieved by an atmospheric and low temperature FLA method may represent a significant advance for scalable fabrication of flexible and printed metal-oxide electronics. © 2019, The Korean Physical Society. | - |
dc.language | English | - |
dc.publisher | 한국물리학회 | - |
dc.title | High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/jkps.74.1052 | - |
dc.identifier.wosid | 000471201000009 | - |
dc.identifier.scopusid | 2-s2.0-85067171515 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.kciid | ART002472547 | - |
dc.contributor.nonIdAuthor | Jo, Jeong-Wan | - |
dc.contributor.nonIdAuthor | Kim, Kyung-Tae | - |
dc.contributor.nonIdAuthor | Park, Ho-Hyun | - |
dc.contributor.nonIdAuthor | Park, Sung Kyu | - |
dc.contributor.nonIdAuthor | Heo, Jae Sang | - |
dc.contributor.nonIdAuthor | Kim, Insoo | - |
dc.identifier.citationVolume | 74 | - |
dc.identifier.citationNumber | 11 | - |
dc.identifier.citationStartPage | 1052 | - |
dc.identifier.citationEndPage | 1058 | - |
dc.identifier.citationTitle | Journal of the Korean Physical Society | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Metal-oxide semiconductors | - |
dc.subject.keywordAuthor | Low temperature solution-process | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.subject.keywordAuthor | Flash lamp annealing | - |
dc.subject.keywordAuthor | Roll-to-roll process | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | IN2O3 | - |
dc.contributor.affiliatedAuthor | Lee, Myoung-Jae | - |
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