Cited 4 time in webofscience Cited 4 time in scopus

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Title
Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications
Authors
Seo, JH[Seo, Jae Hwa]Jo, YW[Jo, Young-Woo]Yoon, YJ[Yoon, Young Jun]Son, DH[Son, Dong-Hyeok]Won, CH[Won, Chul-Ho]Jang, HS[Jang, Hwan Soo]Kang, IM[Kang, In Man]Lee, JH[Lee, Jung-Hee]
DGIST Authors
Jang, HS[Jang, Hwan Soo]
Issue Date
2016-07
Citation
IEEE Electron Device Letters, 37(7), 855-858
Type
Article
Article Type
Article
Keywords
Al(In)N/GanAluminumCutoff FrequencyDevice CharacteristicsDrain-Induced Barrier LoweringDrain CurrentElectron MobilityField Effect TransistorsFinfetFins (Heat Exchange)High Electron Mobility Transistor (Hemt)High Electron Mobility TransistorsI-V CharacteristicsLeakage CurrentLeakage CurrentsLow-Leakage CurrentMOS DevicesShort-Channel EffectShort-Channel Effects (SCEs)Switching ApplicationsTMAH Solution
ISSN
0741-3106
Abstract
Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz. © 2016 IEEE.
URI
http://hdl.handle.net/20.500.11750/2251
DOI
10.1109/LED.2016.2575040
Publisher
Institute of Electrical and Electronics Engineers Inc.
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles


qrcode mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE