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Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Article
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance
  • Cho, Min Su ; 
  • Seo, Jae Hwa ; 
  • Lee, Sang Ho ; 
  • Jang, Hwan Soo ; 
  • Kang, In Man
  • 2020-07
  • Cho, Min Su. (2020-07). Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance. doi: 10.1109/ACCESS.2020.3011103
  • Institute of Electrical and Electronics Engineers Inc.
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