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Showing results 1 to 7 of 7

Conference
Atomic Layer Deposited Highly Conductive Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects
  • Park, Chaehyun ; 
  • Kweon, Minjeong ; 
  • Mohapatra, Debananda ; 
  • Cheon, Taehoon ; 
  • Bae, Jong-Seong ; 
  • Jeong, Daeyoon ; 
  • Park, Young-Bae ; 
  • Kim, Soo-Hyun
  • 2025-06-03
  • International Interconnect Technology Conference, IITC 2025, pp.1 - 3
  • Korean Institute of Electrical and Electronic Material Engineers(한국전기전자재료학회)
  • View : 108
  • Download : 0
Article
Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer
  • Han, Sang Wook ; 
  • Yun, Won Seok ; 
  • Seong, Seungho ; 
  • Tahir, Zeeshan ; 
  • Kim, Yong Soo ; 
  • Ko, Minji ; 
  • Ryu, Sunmin ; 
  • Bae, Jong-Seong ; 
  • Ahn, Chang Won ; 
  • Kang, Jeongsoo
  • 2024-02
  • Han, Sang Wook. (2024-02). Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer. Journal of Physical Chemistry Letters, 15(6), 1590–1595. doi: 10.1021/acs.jpclett.3c03223
  • American Chemical Society
  • View : 297
  • Download : 0
Article
Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition
  • Park, Chaehyun ; 
  • Kweon, Minjeong ; 
  • Mohapatra, Debananda ; 
  • Cheon, Taehoon ; 
  • Bae, Jong-Seong ; 
  • Jeong, Daeyoon ; 
  • Jang, Hyunwoo ; 
  • Shim, Seungwon ; 
  • Park, Young-Bae ; 
  • Kang, Youngho ; 
    • et al
  • 2025-06
  • Park, Chaehyun. (2025-06). Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition. Chemistry of Materials, 37(13), 4743–4757. doi: 10.1021/acs.chemmater.5c00557
  • American Chemical Society
  • View : 1226
  • Download : 0
Article
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Namgung, Sook ; 
  • Kim, Hyangil ; 
  • Nandi, Dip K. ; 
  • Cheon, Taehoon ; 
  • Siddiqui, Masoom Raza ; 
  • Imran, Muhammad ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
    • et al
  • 2024-03
  • Ansari, Mohd Zahid. (2024-03). New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition. Surfaces and Interfaces, 46. doi: 10.1016/j.surfin.2024.104014
  • Elsevier
  • View : 376
  • Download : 0
Conference
Plasma-Enhanced Atomic Layer Deposition of Yttrium Carbide Thin Films as a Promising Transition Metal Carbide for Dual Diffusion Barrier in Cu and Ru Metallization
  • Kweon, Minjeong ; 
  • Park, Chaehyun ; 
  • Mohapatra, Debananda ; 
  • Kim, Sang Bok ; 
  • Bae, Jong-Seong ; 
  • Cheon, Taehoon ; 
  • Kim, Soo-Hyun
  • 2025-06-04
  • International Interconnect Technology Conference, IITC 2025, pp.1 - 3
  • Korean Institute of Electrical and Electronic Material Engineers(한국전기전자재료학회)
  • View : 91
  • Download : 0
Article
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Park, Ye Jin ; 
  • NamGung, Sook ; 
  • Cho, Bo Yeon ; 
  • Nandi, Dip K. ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
  • Hong, Tae Eun ; 
  • Cheon, Taehoon ; 
    • et al
  • 2023-05
  • Ansari, Mohd Zahid. (2023-05). Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor. Applied Surface Science, 620. doi: 10.1016/j.apsusc.2023.156834
  • Elsevier BV
  • View : 337
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Article
Yttrium carbide thin film as an emerging transition metal carbide Prepared by plasma-enhanced atomic layer deposition for Dual diffusion barrier applications into Cu and Ru metallization
  • Kweon, Minjeong ; 
  • Park, Chaehyun ; 
  • Mohapatra, Debananda ; 
  • Kim, Sang Bok ; 
  • Bae, Jong-Seong ; 
  • Cheon, Taehoon ; 
  • Kim, Soo-Hyun
  • 2025-08
  • Kweon, Minjeong. (2025-08). Yttrium carbide thin film as an emerging transition metal carbide Prepared by plasma-enhanced atomic layer deposition for Dual diffusion barrier applications into Cu and Ru metallization. Applied Surface Science, 701. doi: 10.1016/j.apsusc.2025.163302
  • Elsevier
  • View : 141
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