Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer
- Title
- Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer
- Author(s)
- Han, Sang Wook ; Yun, Won Seok ; Seong, Seungho ; Tahir, Zeeshan ; Kim, Yong Soo ; Ko, Minji ; Ryu, Sunmin ; Bae, Jong-Seong ; Ahn, Chang Won ; Kang, Jeongsoo
- Issued Date
- 2024-02
- Citation
- Journal of Physical Chemistry Letters, v.15, no.6, pp.1590 - 1595
- Type
- Article
- Keywords
- RAMAN-SPECTRA ; THIN ; MOBILITY
- ISSN
- 1948-7185
- Abstract
- The Bi2O2Se surfaces are well-known to possess 50% Se vacancies, yet they have shown no in-gap states within the indirect bandgap (similar to 0.8 eV). We have found that the hidden in-gap states arising from the Se vacancies in a 2 x 1 pattern induce a reduced direct bandgap (similar to 0.5 eV). Such a reduced direct bandgap is responsible for the high electron mobility of Bi2O2Se. Moreover, the Bi oxide overlayers of the Bi thin films, formed through air exposure and annealing, unexpectedly exhibit a large direct bandgap (similar to 2.1 eV). The simplified fabrication of Bi oxide overlayers provides promise for improving Bi2O2Se electronic devices and enhancing photocatalytic activity. © 2024 American Chemical Society
- Publisher
- American Chemical Society
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- Appears in Collections:
- Division of Nanotechnology 1. Journal Articles
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