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Article
Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices
  • Ansari, Mohd Zahid ; 
  • Nandi, Dip K. ; 
  • Janicek, Petr ; 
  • Ansari, Sajid Ali ; 
  • Ramesh, Rahul ; 
  • Cheon, Taehoon ; 
  • Shong, Bonggeun ; 
  • Kim, Soo-Hyun
  • 2019-11
  • Ansari, Mohd Zahid. (2019-11). Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices. ACS Applied Materials & Interfaces, 11(46), 43608–43621. doi: 10.1021/acsami.9b15790
  • American Chemical Society
  • View : 842
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Article
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Namgung, Sook ; 
  • Kim, Hyangil ; 
  • Nandi, Dip K. ; 
  • Cheon, Taehoon ; 
  • Siddiqui, Masoom Raza ; 
  • Imran, Muhammad ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
    • et al
  • 2024-03
  • Ansari, Mohd Zahid. (2024-03). New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition. Surfaces and Interfaces, 46. doi: 10.1016/j.surfin.2024.104014
  • Elsevier
  • View : 287
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Article
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Park, Ye Jin ; 
  • NamGung, Sook ; 
  • Cho, Bo Yeon ; 
  • Nandi, Dip K. ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
  • Hong, Tae Eun ; 
  • Cheon, Taehoon ; 
    • et al
  • 2023-05
  • Ansari, Mohd Zahid. (2023-05). Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor. Applied Surface Science, 620. doi: 10.1016/j.apsusc.2023.156834
  • Elsevier BV
  • View : 196
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