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Article
Effects of the Oxygen Content of a-IGZO Field-Effect Transistors on Their Density of States and Dopant Concentration Lateral Profile Regarding Oxygen Scavenging
  • Jeon, SEong Hoon ; 
  • Kim, Wonjung ; 
  • Kim, Seungki ; 
  • Myoung, Seung Joo ; 
  • Shin, Dong Hyeop ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Lee, Yoon Jung ; 
  • Kim, Changwook ; 
  • Kim, Dae Hwan
  • 2026-06
  • IEEE ACCESS, v.14, pp.87829 - 87837
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
  • View : 29
  • Download : 0

Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors

Article
Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors
  • Kim, Seungki ; 
  • Kim, Wonjung ; 
  • Jeon, Seong Hoon ; 
  • Kim, Changwook ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Lee, Yoon Jung ; 
  • Kim, Dae Hwan
  • 2025-11
  • Solid-State Electronics, v.229
  • Elsevier
  • View : 1032
  • Download : 317
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