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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 5 of 5

Article
Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistors
  • Yang, Hyojin ; 
  • Kim, Haesung ; 
  • Kim, Hwan Jin ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Lee, Yoon Jung ; 
  • Bae, Jong-Ho
  • 2026-03
  • Materials Science in Semiconductor Processing, v.204
  • Elsevier
  • View : 86
  • Download : 0
Article
Photonic I-V Technique With Photogating Effect for Extended Extraction of Subgap Density of States in Amorphous Oxide Semiconductor TFTs
  • Kim, Haesung ; 
  • Han, Seung Hyeop ; 
  • Jeong, Hyunwook ; 
  • Yang, Hyojin ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Bae, Jong-Ho ; 
  • Kim, Dong Myong
  • 2025-05
  • Kim, Haesung. (2025-05). Photonic I-V Technique With Photogating Effect for Extended Extraction of Subgap Density of States in Amorphous Oxide Semiconductor TFTs. IEEE Transactions on Electron Devices, 72(5), 2751–2755. doi: 10.1109/TED.2025.3547707
  • Institute of Electrical and Electronics Engineers
  • View : 144
  • Download : 0
Article
Photovoltaic Effect De-Embedded Photonic C-V Characterization of Subgap Density of States in Amorphous Oxide Semiconductor Thin-Film Transistors
  • Han, Seung Hyeop ; 
  • Kim, Haesung ; 
  • Bae, Jong-Ho ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Kim, Dong Myong
  • 2024-11
  • Han, Seung Hyeop. (2024-11). Photovoltaic Effect De-Embedded Photonic C-V Characterization of Subgap Density of States in Amorphous Oxide Semiconductor Thin-Film Transistors. IEEE Transactions on Electron Devices, 71(11), 6795–6798. doi: 10.1109/TED.2024.3469161
  • Institute of Electrical and Electronics Engineers
  • View : 194
  • Download : 0
Conference
Quantitative Analysis of Endurance-dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
  • Yang, Hyojin ; 
  • Kim, Haesung ; 
  • Han, Changhyeon ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Kim, Dong Myong ; 
  • Kwon, Daewoong ; 
  • Bae, Jong-Ho
  • 2025-06-08
  • 2025 Silicon Nanoelectronics Workshop, SNW 2025, pp.74 - 75
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 48
  • Download : 0

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor

Article
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor
  • Lee, Haneul ; 
  • Kim, Sujong ; 
  • Han, Changhyeon ; 
  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Park, Sejun ; 
  • Yun, Sanghyuk ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
    • et al
  • 2026-01
  • ADVANCED ELECTRONIC MATERIALS, v.12, no.2
  • WILEY
  • View : 18
  • Download : 29
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