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Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor

Article
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor
  • Lee, Haneul ; 
  • Kim, Sujong ; 
  • Han, Changhyeon ; 
  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Park, Sejun ; 
  • Yun, Sanghyuk ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
    • et al
  • 2026-01
  • ADVANCED ELECTRONIC MATERIALS, v.12, no.2
  • WILEY
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