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Article
Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor
  • Kang, Jae Wook ; 
  • Park, Kyung Won ; 
  • Park, Byung Nam ; 
  • Moon, Kyo Ho ; 
  • Choi, Sie Young ; 
  • Shon, Young-Soo
  • 2006-12
  • Kang, Jae Wook. (2006-12). Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor. Molecular Crystals and Liquid Crystals, 459(1), 157–165. doi: 10.1080/15421400600930136
  • Taylor & Francis
  • View : 223
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Article
Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor
  • Kang, Jae Wook ; 
  • Park, Kyung Won ; 
  • Park, Byung Nam ; 
  • Moon, Kyo Ho ; 
  • Choi, Sie Young ; 
  • Shon, Young-Soo
  • 2006-12
  • Kang, Jae Wook. (2006-12). Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor. Molecular Crystals and Liquid Crystals, 459(1), 157–165. doi: 10.1080/15421400600930136
  • Taylor & Francis
  • View : 837
  • Download : 0
Article
Effects of a magnetic field on the copper metallization using the electroplating process
  • Park, Byung Nam ; 
  • Shon, Yeong Soo ; 
  • Choi, Sie Young
  • 2008-02
  • Park, Byung Nam. (2008-02). Effects of a magnetic field on the copper metallization using the electroplating process. Microelectronic Engineering, 85(2), 308–314. doi: 10.1016/j.mee.2007.06.018
  • Elsevier BV
  • View : 1045
  • Download : 0
Article
Effects of a magnetic field on the copper metallization using the electroplating process
  • Park, Byung Nam ; 
  • Shon, Yeong Soo ; 
  • Choi, Sie Young
  • 2008-02
  • Park, Byung Nam. (2008-02). Effects of a magnetic field on the copper metallization using the electroplating process. Microelectronic Engineering, 85(2), 308–314. doi: 10.1016/j.mee.2007.06.018
  • Elsevier BV
  • View : 1125
  • Download : 0
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