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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Hole Current Enhancement Using W1-x Cr x Se2 Alloy Interface for p-Type WSe2 FETs

Article
Hole Current Enhancement Using W1-x Cr x Se2 Alloy Interface for p-Type WSe2 FETs
  • 2025-12
  • ACS Applied Materials & Interfaces, v.17, no.50, pp.68695 - 68702
  • American Chemical Society
  • View : 120
  • Download : 152
Article
Laser-Induced Oxygen Engineering for Localized Homojunction Formation in SnS2 Photodetectors
  • 2026-05
  • ADVANCED OPTICAL MATERIALS, v.14, no.17
  • WILEY-V C H VERLAG GMBH
  • View : 35
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