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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

  • Jo, Hyunjin ; 
  • Choi, Jeong-Hun ; 
  • Hyun, Cheol-Min ; 
  • Seo, Seung-Young ; 
  • Kim, Da Young ; 
  • Kim, Chang-Min ; 
  • Lee, Myoung Jae ; 
  • Kwon, Jung-Dae ; 
  • Moon, Hyoung-Seok ; 
  • Kwon, Se-Hun ; 
  • et al
  • 2017-10
  • Jo, Hyunjin. (2017-10). A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels. Scientific Reports, 7(1). doi: 10.1038/s41598-017-14649-6
  • Nature Publishing Group
  • View : 989
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  • 임진솔 ; 
  • 안진혁 ; 
  • 김정민 ; 
  • 성시준 ; 
  • 조국영
  • 2019-05
  • 임진솔. (2019-05). Atomic Layer Deposition의 두께 변화에 따른 NCM 양극에서의 고전압 리튬 이온 전지의 전기화학적 특성 평가. doi: 10.5229/JKES.2019.22.2.60
  • 한국전기화학회
  • View : 1027
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Blue photoluminescence from active carboxyl adatoms on nanoporous anodic alumina films

  • Cho, Sam Yeon ; 
  • Yeo, Kangmo ; 
  • Kim, Jin Woo ; 
  • Kwak, Jin Ho ; 
  • Cho, Deok-Yong ; 
  • Jang, Jae Hyuck ; 
  • Jeong, Sukmin ; 
  • Choi, Yong Chan ; 
  • Bu, Sang Don
  • 2025-01
  • Cho, Sam Yeon. (2025-01). Blue photoluminescence from active carboxyl adatoms on nanoporous anodic alumina films. Scientific Reports, 15(1), 2794. doi: 10.1038/s41598-025-87342-8
  • Nature Publishing Group
  • View : 860
  • Download : 124
  • 2023-07
  • Kim, Dongsu. (2023-07). Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process. Applied Physics Letters, 123(4). doi: 10.1063/5.0123608
  • American Institute of Physics
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  • Download : 0
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