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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Title
A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
Author(s)
Jo, HyunjinChoi, Jeong-HunHyun, Cheol-MinSeo, Seung-YoungKim, Da YoungKim, Chang-MinLee, Myoung JaeKwon, Jung-DaeMoon, Hyoung-SeokKwon, Se-HunAhn, Ji-Hoon
Issued Date
2017-10
Citation
Scientific Reports, v.7, no.1
Type
Article
Keywords
FIELD-EFFECT TRANSISTORSFILM TRANSISTORSLOW-POWERMOS2POLYMERCAPACITANCEMOBILITYAL2O3WS2
ISSN
2045-2322
Abstract
We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. © 2017 The Author(s).
URI
http://hdl.handle.net/20.500.11750/4757
DOI
10.1038/s41598-017-14649-6
Publisher
Nature Publishing Group
Related Researcher
  • 이명재 Lee, Myoung-Jae
  • Research Interests Next generation semiconductor material/device; 차세대 반도체 소재/소자; Memristor; 멤리스터; Neuromorphic device; 뉴로모픽 소자; Nonvolatile resistance memory; 비휘발성 저항변화메모리
Files in This Item:
10.1038_s41598_017_14649_6.pdf

10.1038_s41598_017_14649_6.pdf

기타 데이터 / 1.99 MB / Adobe PDF download
Appears in Collections:
Division of Nanotechnology 1. Journal Articles

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