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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Title
A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
Authors
Jo, H.Choi, J.-H.Hyun, C.-M.Seo, S.-Y.Kim, D.Y.Kim, C.-M.Lee, Myoung JaeKwon, J.-D.Moon, H.-S.Kwon, S.-H.Ahn, J.-H.
DGIST Authors
Lee, Myoung Jae
Issue Date
2017
Citation
Scientific Reports, 7(1)
Type
Article
Article Type
Article
Keywords
Al2O3CapacitanceChemical-Vapor-DepositionField-Effect TransistorsFilm TransistorsLiquidsLow-PowerMobilityMoS2 TransistorsPolymer
ISSN
2045-2322
Abstract
We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. © 2017 The Author(s).
URI
http://hdl.handle.net/20.500.11750/4757
DOI
10.1038/s41598-017-14649-6
Publisher
Nature Publishing Group
Related Researcher
Files:
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Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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