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Showing results 1 to 7 of 7

Article
A 46-nF/10-M omega Range 114-aF/0.37-omega Resolution Parasitic- and Temperature-Insensitive Reconfigurable RC-to-Digital Converter in 0.18-mu m CMOS
  • 2022-03
  • George, Arup Kocheethra. (2022-03). A 46-nF/10-M omega Range 114-aF/0.37-omega Resolution Parasitic- and Temperature-Insensitive Reconfigurable RC-to-Digital Converter in 0.18-mu m CMOS. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(3), 1171–1184. doi: 10.1109/TCSI.2021.3134010
  • Institute of Electrical and Electronics Engineers
  • View : 601
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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Article
A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
  • Jo, Hyunjin ; 
  • Choi, Jeong-Hun ; 
  • Hyun, Cheol-Min ; 
  • Seo, Seung-Young ; 
  • Kim, Da Young ; 
  • Kim, Chang-Min ; 
  • Lee, Myoung Jae ; 
  • Kwon, Jung-Dae ; 
  • Moon, Hyoung-Seok ; 
  • Kwon, Se-Hun ; 
    • et al
  • 2017-10
  • Jo, Hyunjin. (2017-10). A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels. Scientific Reports, 7(1). doi: 10.1038/s41598-017-14649-6
  • Nature Publishing Group
  • View : 900
  • Download : 168
Article
An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-mu m CMOS
  • 2020-09
  • Lee, Junghyup. (2020-09). An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-mu m CMOS. IEEE Journal of Solid-State Circuits, 55(9), 2489–2497. doi: 10.1109/JSSC.2020.2987681
  • Institute of Electrical and Electronics Engineers
  • View : 719
  • Download : 0
Article
Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap
  • Yang, Jae Hoon ; 
  • Shin, Jeong Hee ; 
  • Kim, Seunguk ; 
  • Pyo, Go eun ; 
  • Jang, A-Rang ; 
  • Yang, Hyoung Woo ; 
  • Kang, Dae Joon ; 
  • Jang, Jae Eun
  • 2019-11
  • Yang, Jae Hoon. (2019-11). Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap. IEEE Electron Device Letters, 40(11), 1840–1843. doi: 10.1109/LED.2019.2940818
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 939
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Article
Review of piezoelectric micromachined ultrasonic transducers and their applications
  • Jung, Joon-Taek ; 
  • Lee, Won-Jun ; 
  • Kang, Woo-Jin ; 
  • Shin, Eun-Jung ; 
  • Ryu, Jung-Ho ; 
  • Choi, Hong-Soo
  • 2017-11
  • Jung, Joon-Taek. (2017-11). Review of piezoelectric micromachined ultrasonic transducers and their applications. Journal of Micromechanics and Microengineering, 27(11). doi: 10.1088/1361-6439/aa851b
  • IOP PUBLISHING LTD
  • View : 1067
  • Download : 0
Article
Simplified Compressor and Encoder Designs for Low-Cost Approximate Radix-4 Booth Multiplier
  • 2023-03
  • Park, Gunho. (2023-03). Simplified Compressor and Encoder Designs for Low-Cost Approximate Radix-4 Booth Multiplier. IEEE Transactions on Circuits and Systems II: Express Briefs, 70(3), 1154–1158. doi: 10.1109/TCSII.2022.3217696
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 276
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Article
Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro-Hole Patterning
  • Pyo, Goeun ; 
  • Lee, Gwang Jun ; 
  • Lee, Seungchul ; 
  • Yang, Jae Hoon ; 
  • Heo, Su Jin ; 
  • Choi, Gyeong Hyeon ; 
  • Cha, SeungNam ; 
  • Jang, Jae Eun
  • 2022-04
  • Pyo, Goeun. (2022-04). Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro-Hole Patterning. Advanced Electronic Materials, 8(4). doi: 10.1002/aelm.202101000
  • Wiley-VCH Verlag
  • View : 489
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