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An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-mu m CMOS
- An Ultra-Low-Noise Swing-Boosted Differential Relaxation Oscillator in 0.18-mu m CMOS
- Lee, Junghyup; George, Arup Kocheethra; Je, Minkyu
- DGIST Authors
- Lee, Junghyup
- Issue Date
- IEEE Journal of Solid-State Circuits, 55(9), 2489-2497
- Article Type
- Author Keywords
- CMOS; jitter; low phase noise; relaxation oscillators; swing-boosting
- LOW-POWER; SENSOR; TIMER
- This article presents an ultra-low-noise differential relaxation oscillator that achieves a phase noise figure of merits (FoMs) of 157.7 and 162.1 dBc/Hz, respectively, at 1- and 100-kHz frequency offsets. The oscillator is inherently robust against 1/f noise, while swing-boosting minimizes the phase noise arising out of thermal noise. Furthermore, an inverter-based differential comparator maximizes power efficiency, enabling FoMs close to the fundamental limits. Operating at 10.5 MHz and consuming 219.8 μ W from a 1.4-V supply, the oscillator achieves a period jitter of 9.86 psrms, equivalent to a relative jitter of 0.01%. The oscillator occupies an active area of 0.015 mm2 in a 0.18- μ m standard CMOS process.
- Institute of Electrical and Electronics Engineers
- Related Researcher
Integrated Nano-Systems Laboratory
Analog and Mixed Signal IC Design; Smart Sensor Systems; Bio-medical ICs and Body Channel Communication Systems
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- Department of Information and Communication EngineeringIntegrated Nano-Systems Laboratory1. Journal Articles
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