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Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors

Article
Source/drain metal-dependent oxygen scavenging from the viewpoint of the decoupling between source/drain resistance and threshold voltage in InGaZnO thin-film transistors
  • Kim, Seungki ; 
  • Kim, Wonjung ; 
  • Jeon, Seong Hoon ; 
  • Kim, Changwook ; 
  • Kim, Dong Myong ; 
  • Choi, Sung-Jin ; 
  • Lee, Yoon Jung ; 
  • Kim, Dae Hwan
  • 2025-11
  • Solid-State Electronics, v.229
  • Elsevier
  • View : 1032
  • Download : 317
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