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Article
Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs
  • Jeong, J[Jeong, Jaewook] ; 
  • Hong, Y[Hong, Yongtaek]
  • 2012-03
  • Jeong, J[Jeong, Jaewook]. (2012-03). Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs. doi: 10.1109/TED.2011.2180908
  • Institute of Electrical and Electronics Engineers Inc.
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Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 139
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Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
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