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Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors

Title
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
Author(s)
Jeong, J.Kim, J.Lee, G. J.Choi, B. -D.
Issued Date
2011-11-10
Citation
Electronics Letters, v.47, no.23, pp.1295 - 1297
Type
Article
Keywords
Active LayerAmorphous FilmsATLAS 2DBack ChannelsDevice SimulatorsGalliumIndiumIndium Gallium Zinc OxidesInterfacial StateNumerical AnalysisPassivation LayerPositive ShiftSemiconducting Indium CompoundsThin Film TransistorsZinc Oxide
ISSN
0013-5194
Abstract
The effects of back channel interfacial states (N bit) that can be generated by passivation layer deposition for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by using an ATLAS 2D device simulator are analysed. As N bit is increased, the positive shift of threshold voltage (V TH) is observed for thin and thick active layer TFTs due to the acceptor-like characteristics of interfacial states. However, as N bit is further increased, the V TH shift of the thick active layer TFT is eventually saturated, while that of the thin active layer TFT is continuously increased. This is because the characteristics of the a-IGZO TFT with a thin active layer are strongly affected by N bit, which can be used for optimising the performance of a-IGZO TFTs. © 2011 The Institution of Engineering and Technology.
URI
http://hdl.handle.net/20.500.11750/3428
DOI
10.1049/el.2011.2024
Publisher
Institution of Engineering and Technology
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Division of Nanotechnology 1. Journal Articles
Division of AI, Big data and Block chain 1. Journal Articles

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