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Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors

Title
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
Authors
Jeong, J[Jeong, J.]Kim, J[Kim, J.]Lee, GJ[Lee, G. J.]Choi, BD[Choi, B. -D.]
DGIST Authors
Jeong, J[Jeong, J.]; Kim, J[Kim, J.]; Lee, GJ[Lee, G. J.]; Choi, BD[Choi, B. -D.]
Issue Date
2011-11-10
Citation
Electronics Letters, 47(23), 1295-1297
Type
Article
Article Type
Article
Keywords
Active LayerAmorphous FilmsATLAS 2DBack ChannelsDevice SimulatorsGalliumIndiumIndium Gallium Zinc OxidesInterfacial StateNumerical AnalysisPassivation LayerPositive ShiftSemiconducting Indium CompoundsThin-Film Transistors (TFTs)Zinc Oxide
ISSN
0013-5194
Abstract
The effects of back channel interfacial states (N bit) that can be generated by passivation layer deposition for amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) by using an ATLAS 2D device simulator are analysed. As N bit is increased, the positive shift of threshold voltage (V TH) is observed for thin and thick active layer TFTs due to the acceptor-like characteristics of interfacial states. However, as N bit is further increased, the V TH shift of the thick active layer TFT is eventually saturated, while that of the thin active layer TFT is continuously increased. This is because the characteristics of the a-IGZO TFT with a thin active layer are strongly affected by N bit, which can be used for optimising the performance of a-IGZO TFTs. © 2011 The Institution of Engineering and Technology.
URI
http://hdl.handle.net/20.500.11750/3428
DOI
10.1049/el.2011.2024
Publisher
Institution of Engineering and Technology
Related Researcher
Files:
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Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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