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Showing results 1 to 16 of 16

Article
Characterization of Ga-doped ZnO Nanorods Synthesized via Microemulsion Method
  • 2013-01
  • Lim, Sang Kyoo. (2013-01). Characterization of Ga-doped ZnO Nanorods Synthesized via Microemulsion Method. Journal of Materials Science & Technology, 29(1), 39–43. doi: 10.1016/j.jmst.2012.11.005
  • Allerton Press Inc.
  • View : 886
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Article
Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se-2 thin films
  • 2015-09
  • Ko, Byoung-Soo. (2015-09). Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se-2 thin films. Thin Solid Films, 590, 330–334. doi: 10.1016/j.tsf.2015.02.053
  • Elsevier
  • View : 861
  • Download : 0
Article
Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs
  • Jeong, J[Jeong, Jaewook] ; 
  • Hong, Y[Hong, Yongtaek]
  • 2012-03
  • Jeong, J[Jeong, Jaewook]. (2012-03). Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs. doi: 10.1109/TED.2011.2180908
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 791
  • Download : 0
Article
Effect of ZnO Layer Thickness on Efficiency of Cu(In,Ga)Se-2 Thin-film Solar Cells
  • Kim, Chan ; 
  • Jo, Hyun-Jun ; 
  • Kim, Dae-Hwan ; 
  • Son, Dae-Ho ; 
  • Lee, Dong-Ha ; 
  • Rhee, Ilsu
  • 2012
  • Kim, Chan. (2012). Effect of ZnO Layer Thickness on Efficiency of Cu(In,Ga)Se-2 Thin-film Solar Cells. Molecular Crystals and Liquid Crystals, 565, 52–58. doi: 10.1080/15421406.2012.692227
  • Taylor and Francis Ltd.
  • View : 326
  • Download : 0

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Article
Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
  • Jeong, Jaewook ; 
  • Kim, Joonwoo ; 
  • Kim, Donghyun ; 
  • Jeon, Heonsu ; 
  • Jeong, Soon Moon ; 
  • Hong, Yongtaek
  • 2016-08
  • AIP Advances, v.6, no.8
  • American Institute of Physics Publishing
  • View : 812
  • Download : 76

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Article
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
  • Kim, Joonwoo ; 
  • Myung, Sung ; 
  • Noh, Hee-Yeon ; 
  • Jeong, Soon Moon ; 
  • Jeong, Jaewook
  • 2015-09
  • AIP Advances, v.5, no.9
  • American Institute of Physics Publishing
  • View : 1009
  • Download : 78
Article
n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
  • Choi, Mi Kyung ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Kong, Bo Hyun ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun ; 
  • Seo, Hong-Seok ; 
  • Kim, Kang-Pil ; 
  • Lee, Jung-Ho
  • 2009-12
  • Choi, Mi Kyung. (2009-12). n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates. Journal of Materials Science: Materials in Electronics, 20(12), 1214–1218. doi: 10.1007/s10854-009-9854-y
  • Springer
  • View : 887
  • Download : 0
Article
n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
  • Choi, Mi Kyung ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Kong, Bo Hyun ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun ; 
  • Seo, Hong-Seok ; 
  • Kim, Kang-Pil ; 
  • Lee, Jung-Ho
  • 2009-12
  • Choi, Mi Kyung. (2009-12). n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates. Journal of Materials Science: Materials in Electronics, 20(12), 1214–1218. doi: 10.1007/s10854-009-9854-y
  • Springer
  • View : 962
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 139
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
  • View : 835
  • Download : 0
Article
Perpendicular magnetic anisotropy properties of tetragonal Mn3Ga films under various deposition conditions
  • Bang, Hyun-Woo ; 
  • Yoo, Woosuk ; 
  • Choi, Youngha ; 
  • You, Chun-Yeol ; 
  • Hong, Jung-Il ; 
  • Dolinsek, Janez ; 
  • Jung, Myung-Hwa
  • 2016-01
  • Bang, Hyun-Woo. (2016-01). Perpendicular magnetic anisotropy properties of tetragonal Mn3Ga films under various deposition conditions. Current Applied Physics, 16(1), 63–67. doi: 10.1016/j.cap.2015.10.012
  • Elsevier B.V.
  • View : 993
  • Download : 0
Article
Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation
  • Park, Soon-Yong ; 
  • Lee, Eun-Woo ; 
  • Lee, Sang-Hwan ; 
  • Lee, Sung Ho ; 
  • Huh, Kwang Soo ; 
  • Kang, J. K. ; 
  • Kim, D. -H. ; 
  • Lee, D. H. ; 
  • Jeon, Chan-Wook
  • 2010
  • Park, Soon-Yong. (2010). Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation. Molecular Crystals and Liquid Crystals, 532, 424–430. doi: 10.1080/15421406.2010.497091
  • Taylor and Francis Ltd.
  • View : 305
  • Download : 0
Article
Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation
  • Park, Soon-Yong ; 
  • Lee, Eun-Woo ; 
  • Lee, Sang-Hwan ; 
  • Lee, Sung Ho ; 
  • Huh, Kwang Soo ; 
  • Kang, J. K. ; 
  • Kim, D. -H. ; 
  • Lee, D. H. ; 
  • Jeon, Chan-Wook
  • 2010
  • Park, Soon-Yong. (2010). Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation. Molecular Crystals and Liquid Crystals, 532, 424–430. doi: 10.1080/15421406.2010.497091
  • Taylor and Francis Ltd.
  • View : 855
  • Download : 0
Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 879
  • Download : 0
Article
Sonochemical Formation of Ga-Pt Intermetallic Nanoparticles Embedded in Graphene and its Potential Use as an Electrocatalyst
  • Kumar, Vijay Bhooshan ; 
  • Sanetuntikul, Jakkid ; 
  • Ganesan, Pandian ; 
  • Porat, Ze'ev ; 
  • Shanmugam, Sangaraju ; 
  • Gedanken, Aharon
  • 2016-02-01
  • Kumar, Vijay Bhooshan. (2016-02-01). Sonochemical Formation of Ga-Pt Intermetallic Nanoparticles Embedded in Graphene and its Potential Use as an Electrocatalyst. Electrochimica Acta, 190, 659–667. doi: 10.1016/j.electacta.2015.12.193
  • Elsevier Ltd
  • View : 911
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Article
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
  • 2015-11
  • Electronics Letters, v.51, no.24, pp.2047 - 2048
  • Institution of Engineering and Technology
  • View : 807
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