DGIST Scholar: Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

Title: Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

Author Keywords: indium compounds ; gallium compounds ; graphene devices ; thin film transistors ; semiconductor diodes ; electrodes ; transparent thin film transistor ; diode circuit ; graphene active layer ; amorphous indium-gallium-zinc-oxide active layer ; serial connection ; transparent graphene diode ; a-IGZO active layer ; graphene electrode ; C ; InGaZnO

Keywords: A-IGZO Active Layer ; Active Layer ; Amorphous-Indium Gallium Zinc Oxides ; Amorphous Films ; Amorphous Indium-Gallium-Zinc-Oxide Active Layer ; Amorphous Indium-Gallium-Zinc-Oxide (A-IGZO) ; Amorphous Semiconductors ; C ; Diode Circuit ; Diode Circuits ; Diodes ; Electrodes ; Gallium ; Gallium Compounds ; Graphene ; Graphene Active Layer ; Graphene Devices ; Graphene Electrode ; GRAPHENE ELECTRODES ; Graphite Electrodes ; Indium ; Indium Compounds ; InGaZnO ; Semiconducting Indium Compounds ; Semiconductor Diodes ; Serial Connection ; Thin Film Transistors ; Thin Films ; Transparent Graphene ; Transparent Graphene Diode ; Transparent Thin Film Transistor ; Zinc ; Zinc Oxide

Abstract: A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT- diode device can be applied to transparent a-IGZO and graphene integrated circuits. © 2015 The Institution of Engineering and Technology.

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