Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
- Title
- Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
- Author(s)
- Kim, J[Kim, J.] ; Jeong, SM[Jeong, S. M.] ; Jeong, J[Jeong, J.]
- DGIST Authors
- Kim, J[Kim, J.] ; Jeong, SM[Jeong, S. M.]
- Issued Date
- 2015-11-19
- Type
- Article
- Article Type
- Article
- Subject
- Active Layer ; Amorphous Films ; Amorphous Indium-Gallium-Zinc-Oxide (A-IGZO) ; Amorphous Semiconductors ; Diode Circuits ; Diodes ; Electrodes ; Gallium ; Graphene ; Graphene Electrodes ; Graphite Electrodes ; Indium ; Semiconducting Indium Compounds ; Serial Connection ; Thin-Film Transistors (TFTs) ; Thin-Films ; Transparent Graphene ; Transparent Thin Film Transistor ; Zinc ; Zinc Oxide
- ISSN
- 0013-5194
- Abstract
- A transparent thin-film transistor-diode (TFT-diode) circuit through the serial connection of a transparent TFT and a transparent graphene diode comprised of an amorphous indium-gallium-zinc-oxide (a-IGZO) active layer and a graphene electrode are demonstrated. Through transferring the graphene electrode onto the fabricated TFT, the TFT operates in a single direction due to the directional operation of the transparent graphene diode. The resulting transparent TFT- diode device can be applied to transparent a-IGZO and graphene integrated circuits. © 2015 The Institution of Engineering and Technology.
- Publisher
- Institution of Engineering and Technology
- Related Researcher
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Jeong, Soon Moon 에너지융합연구부
- Research Interests
-
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