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n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
- n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
- Choi, MK[Choi, Mi Kyung]; Han, WS[Han, Won Suk]; Kim, YY[Kim, Young Yi]; Kong, BH[Kong, Bo Hyun]; Cho, HK[Cho, Hyung Koun]; Kim, JH[Kim, Jae Hyun]; Seo, HS[Seo, Hong-Seok]; Kim, KP[Kim, Kang-Pil]; Lee, JH[Lee, Jung-Ho]
- DGIST Authors
- Kim, JH[Kim, Jae Hyun]; Seo, HS[Seo, Hong-Seok]; Kim, KP[Kim, Kang-Pil]
- Issue Date
- Journal of Materials Science: Materials in Electronics, 20(12), 1214-1218
- Article Type
- Ga Film; Gallium; Gallium Alloys; Grain Boundaries; Grain Boundary Densities; Grain Size and Shape; Heterojunctions; High Density; High Temperature; Hole Carriers; Light-Emitting Diodes; Light Emission; Output Power; Patterned Substrates; Random Tilting; Reverse Bias; Semiconducting Silicon Compounds; Semiconducting Zinc Compounds; Si Substrates; Silicon; Substrates; Visible Emissions; Zinc Oxide; ZnO; ZnO Layers; ZnO/p-Si
- N-ZnO:Gai-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting. © Springer Science+Business Media, LLC 2009.
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