Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
- Title
- Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
- Author(s)
- Jeong, Jaewook ; Kim, Joonwoo ; Kim, Donghyun ; Jeon, Heonsu ; Jeong, Soon Moon ; Hong, Yongtaek
- Issued Date
- 2016-08
- Citation
- AIP Advances, v.6, no.8
- Type
- Article
- Keywords
- Amorphous-Indium Gallium Zinc Oxides ; Amorphous Films ; Amorphous Semiconductors ; Back Channels ; Channel Layers ; Effective Channel Length ; Effective Mobilities ; Fabrication ; Field-Effect Mobilities ; Gallium ; Holographic Lithography ; Indium ; Lithography ; Mobility Enhancement ; OXIDE SemICONDUCTORS ; Periodic Structures ; Semiconducting Indium Compounds ; Thin Film Circuits ; Thin Film Transistors ; Thin Films ; Zinc
- ISSN
- 2158-3226
- Abstract
- In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer. © 2016 Author(s).
- Publisher
- American Institute of Physics Publishing
- Related Researcher
-
-
Jeong, Soon Moon
- Research Interests Mechanoluminescence; 기계발광; Electroluminescence; 전계발광; Display; 디스플레이; Stretchable; 스트레쳐블; Battery-free; 무전원
-
- Files in This Item:
-
기타 데이터 / 4.55 MB / Adobe PDF
download
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.