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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 7 of 7

Article
CO-Tolerant PtMo/C Fuel Cell Catalyst for H-2 Oxidation
  • Bang, Jin Ho ; 
  • Kim, Hasuck
  • 2011-10
  • Bang, Jin Ho. (2011-10). CO-Tolerant PtMo/C Fuel Cell Catalyst for H-2 Oxidation. Bulletin of the Korean Chemical Society, 32(10), 3660–3665. doi: 10.5012/bkcs.2011.32.10.3660
  • Korean Chemical Society
  • View : 395
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Article
CO-Tolerant PtMo/C Fuel Cell Catalyst for H-2 Oxidation
  • Bang, Jin Ho ; 
  • Kim, Hasuck
  • 2011-10
  • Bang, Jin Ho. (2011-10). CO-Tolerant PtMo/C Fuel Cell Catalyst for H-2 Oxidation. Bulletin of the Korean Chemical Society, 32(10), 3660–3665. doi: 10.5012/bkcs.2011.32.10.3660
  • Korean Chemical Society
  • View : 1058
  • Download : 0
Article
Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides
  • Dhakal, Krishna P. ; 
  • Roy, Shrawan ; 
  • Jang, Houk ; 
  • Chen, Xiang ; 
  • Yun, Won Seok ; 
  • Kim, Hyunmin ; 
  • Lee, JaeDong ; 
  • Kim, Jeongyong ; 
  • Ahn, Jong-Hyun
  • 2017-06
  • Dhakal, Krishna P. (2017-06). Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides. Chemistry of Materials, 29(12), 5124–5133. doi: 10.1021/acs.chemmater.7b00453
  • American Chemical Society
  • View : 1054
  • Download : 0
Article
New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts
  • 2017-03
  • Lee, Su Yeong. (2017-03). New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts. ACS Applied Materials & Interfaces, 9(8), 7873–7877. doi: 10.1021/acsami.7b00357
  • American Chemical Society
  • View : 846
  • Download : 0

Period-doubling reconstructions of semiconductor partial dislocations

Article
Period-doubling reconstructions of semiconductor partial dislocations
  • Park, Ji-Sang ; 
  • Huang, Bing ; 
  • Wei, Su-Huai ; 
  • Kang, Joongoo ; 
  • McMahon, William E.
  • 2015-09
  • Park, Ji-Sang. (2015-09). Period-doubling reconstructions of semiconductor partial dislocations. NPG Asia Materials, 7(9). doi: 10.1038/am.2015.102
  • Nature Publishing Group
  • View : 1144
  • Download : 116

Theory guided systematic molecular design of benzothiadiazole-phenazine based self-assembling electron-acceptors

Article
Theory guided systematic molecular design of benzothiadiazole-phenazine based self-assembling electron-acceptors
  • Lee, Dong-Chan ; 
  • Jeong, Youngjun ; 
  • Brownell, Lacie V. ; 
  • Velasco, John E. ; 
  • Robins, Kathleen A. ; 
  • Lee, Youngu
  • 2017-05
  • RSC Advances, v.7, no.39, pp.24105 - 24112
  • Royal Society of Chemistry
  • View : 966
  • Download : 132
Article
Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate
  • Jeon, Jeong Heum ; 
  • Kim, Howon ; 
  • Jang, Won-Jun ; 
  • Seo, Jungpil ; 
  • Kahng, Se-Jong
  • 2017-05-26
  • Jeon, Jeong Heum. (2017-05-26). Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate. Nanotechnology, 28(21). doi: 10.1088/1361-6528/aa6b52
  • Institute of Physics Publishing
  • View : 1001
  • Download : 0
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