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Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate

Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate
Jeon, Jeong HeumKim, HowonJang, Won-JunSeo, JungpilKahng, Se-Jong
DGIST Authors
Seo, Jungpil
Issued Date
Article Type
Angle Resolved Photoemission SpectroscopyBi2Se3Bi2Te3Bismuth SelenideBismuth SelenideConeDirac MaterialDispersionsElectric InsulatorsElectron EmissionElectron Interference PatternsElectronic PropertiesElectronic StatesEpitaxial GrowthInterfaceInterfaces (Materials)Interfacial EffectsInterference PatternsMajorana FermionsMetalsMolecular Beam EpitaxyMolecular Beam EpitaxyMolecular BeamsPhotoelectron SpectroscopyQuantum ChemistryQuantum ElectronicsQuantum TheoryScanningScanning Tunneling MicroscopyScanning Tunneling MicroscopyScanning Tunneling SpectroscopySemiconducting Selenium CompoundsStatesSubstratesSuperconductorSurfaceThin Topological InsulatorTime Reversal SymmetriesTopological InsulatorsTransportTunneling Microscopy
The surface states protected by time-reversal symmetry in 3-dimensional topological insulators have recently been confirmed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy, quantum transport and so on. However, the electronic properties of ultra-thin topological insulator films have not been extensively studied, especially when the films are grown on metal substrates. In this paper, we have elucidated the local behaviors of the electronic states of ultra-thin topological insulator Bi2Se3 grown with molecular beam epitaxy on Au(111) using scanning tunneling microscopy/spectroscopy. We have observed linear dispersion of electron interference patterns at higher energies than the Fermi energy that were not accessible by conventional angle-resolved photoemission spectroscopy. Moreover, the dispersion of the interference patterns varies with the film thickness, which is explained by band bending near the interface between the topological insulator and the metal substrate. Our experiments demonstrate that interfacial effects in thin topological insulator films on metal substrate can be sensed using scanning tunneling spectroscopy. © 2017 IOP Publishing Ltd.
Institute of Physics Publishing
Related Researcher
  • 서정필 Seo, Sangwon 화학물리학과
  • Research Interests Topological Matters; High Tc Superconductors; Low dimensional Quantum Matters
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Department of Physics and Chemistry Nanospm Lab(Advanced Materials Research Group) 1. Journal Articles


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