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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
  • Jo, Hyunjin ; 
  • Choi, Jeong-Hun ; 
  • Hyun, Cheol-Min ; 
  • Seo, Seung-Young ; 
  • Kim, Da Young ; 
  • Kim, Chang-Min ; 
  • Lee, Myoung Jae ; 
  • Kwon, Jung-Dae ; 
  • Moon, Hyoung-Seok ; 
  • Kwon, Se-Hun ; 
    • et al
  • 2017-10
  • Jo, Hyunjin. (2017-10). A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels. Scientific Reports, 7(1). doi: 10.1038/s41598-017-14649-6
  • Nature Publishing Group
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