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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article
Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process
  • 2023-07
  • Kim, Dongsu. (2023-07). Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process. Applied Physics Letters, 123(4). doi: 10.1063/5.0123608
  • American Institute of Physics
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Article
Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices
  • Jeon, Jaeho ; 
  • Lee, Jinhee ; 
  • Yoo, Gwangwe ; 
  • Park, Jin-Hong ; 
  • Yeom, Geun Young ; 
  • Jang, Yun Hee ; 
  • Lee, Sungjoo
  • 2016
  • Jeon, Jaeho. (2016). Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices. Nanoscale, 8(38), 16995–17003. doi: 10.1039/c6nr04456e
  • Royal Society of Chemistry
  • View : 907
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