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Showing results 1 to 9 of 9

Article
A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors
  • 2016-02-18
  • Kang, Joongoo. (2016-02-18). A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors. Journal of Physical Chemistry Letters, 7(4), 597–602. doi: 10.1021/acs.jpclett.5b02687
  • American Chemical Society
  • View : 1154
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Article
Atomistic investigations of kappa-carbide precipitation in austenitic Fe-Mn-Al-C lightweight steels and the effect of Mo addition
  • Moon, Joonoh ; 
  • Park, Seong-Jun ; 
  • Jang, Jae Hoon ; 
  • Lee, Tae-Ho ; 
  • Lee, Chang-Hoon ; 
  • Hong, Hyun-Uk ; 
  • Suh, Dong-Woo ; 
  • Kim, Seong Hoon ; 
  • Han, Heung Nam ; 
  • Lee, Bong Ho
  • 2017-01
  • Scripta Materialia, v.127, pp.97 - 101
  • Elsevier
  • View : 1207
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Article
First principles study of the thermodynamic and kinetic properties of U in an electrorefining system using molybdenum cathode and LiCl-KCl eutectic molten salt
  • Kwon, Choah ; 
  • Kang, Joonhee ; 
  • Kang, Woojong ; 
  • Kwak, Dohyun ; 
  • Han, Byungchan
  • 2016-03
  • Kwon, Choah. (2016-03). First principles study of the thermodynamic and kinetic properties of U in an electrorefining system using molybdenum cathode and LiCl-KCl eutectic molten salt. Electrochimica Acta, 195, 216–222. doi: 10.1016/j.electacta.2016.02.123
  • Elsevier
  • View : 1205
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Article
First-Principles Study on the Thermal Stability of LiNiO2 Materials Coated by Amorphous Al2O3 with Atomic Layer Thickness
  • Kang, Joonhee ; 
  • Han, Byungchan
  • 2015-06
  • Kang, Joonhee. (2015-06). First-Principles Study on the Thermal Stability of LiNiO2 Materials Coated by Amorphous Al2O3 with Atomic Layer Thickness. ACS Applied Materials & Interfaces, 7(21), 11599–11603. doi: 10.1021/acsami.5b02572
  • American Chemical Society
  • View : 1301
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Article
Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode
  • Hihath, Joshua ; 
  • Bruot, Christopher ; 
  • Nakamura, Hisao ; 
  • Asai, Yoshihiro ; 
  • Diez-Perez, Ismael ; 
  • Lee, Youngu ; 
  • Yu, Luping ; 
  • Tao, Nongjian
  • 2011-10
  • Hihath, Joshua. (2011-10). Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode. ACS Nano, 5(10), 8331–8339. doi: 10.1021/nn2030644
  • American Chemical Society
  • View : 585
  • Download : 0
Article
Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode
  • Hihath, Joshua ; 
  • Bruot, Christopher ; 
  • Nakamura, Hisao ; 
  • Asai, Yoshihiro ; 
  • Diez-Perez, Ismael ; 
  • Lee, Youngu ; 
  • Yu, Luping ; 
  • Tao, Nongjian
  • 2011-10
  • Hihath, Joshua. (2011-10). Inelastic Transport and Low-Bias Rectification in a Single-Molecule Diode. ACS Nano, 5(10), 8331–8339. doi: 10.1021/nn2030644
  • American Chemical Society
  • View : 1082
  • Download : 0
Article
Integrated study of first principles calculations and experimental measurements for Li-ionic conductivity in Al-doped solid-state LiGe2(PO4)(3) electrolyte
  • Kang, Joonhee ; 
  • Chung, Habin ; 
  • Doh, Chilhoon ; 
  • Kang, Byoungwoo ; 
  • Han, Byungchan
  • 2015-10-20
  • Kang, Joonhee. (2015-10-20). Integrated study of first principles calculations and experimental measurements for Li-ionic conductivity in Al-doped solid-state LiGe2(PO4)(3) electrolyte. Journal of Power Sources, 293, 11–16. doi: 10.1016/j.jpowsour.2015.05.060
  • Elsevier B.V.
  • View : 1296
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Article
Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension
  • 2015-06
  • Kim, Jongmin. (2015-06). Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension. Journal of Physical Chemistry C, 119(24), 13901–13906. doi: 10.1021/acs.jpcc.5b02232
  • American Chemical Society
  • View : 1058
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Article
Polymerization of defect states at dislocation cores in InAs
  • Park, Ji-Sang ; 
  • Kang, Joongoo ; 
  • Yang, Ji-Hui ; 
  • McMahon, W. E. ; 
  • Wei, Su-Huai
  • 2016-01-28
  • Park, Ji-Sang. (2016-01-28). Polymerization of defect states at dislocation cores in InAs. Journal of Applied Physics, 119(4). doi: 10.1063/1.4940743
  • American Institute of Physics Publishing
  • View : 1182
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