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Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
  • Baik, Seunghun ; 
  • Kwon, Hyeokjin ; 
  • Paeng, Chuck ; 
  • Zhang, He ; 
  • Kalkofen, Bodo ; 
  • Jang, Jae Eun ; 
  • Kim, Y. S. ; 
  • Kwon, Hyuk-Jun
  • 2019-09
  • Baik, Seunghun. (2019-09). Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process. IEEE Electron Device Letters, 40(9), 1507–1510. doi: 10.1109/LED.2019.2931404
  • Institute of Electrical and Electronics Engineers
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