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Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process

Title
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
Authors
Baik, SeunghunKwon, HyeokjinPaeng, ChuckZhang, HeKalkofen, BodoJang, Jae EunKim, Y. S.Kwon, Hyuk-Jun
DGIST Authors
Jang, Jae EunKwon, Hyuk-Jun
Issue Date
2019-09
Citation
IEEE Electron Device Letters, 40(9), 1507-1510
Type
Article
Article Type
Article
Author Keywords
Co-dopingflash annealinggermaniumplasma assisted atomic layer deposition
Keywords
GERMANIUMDIFFUSIONIMPLANTATIONACTIVATIONDOPANTSXPS
ISSN
0741-3106
Abstract
To achieve a high concentration of dopants over 1 x 10(20) cm(-3) on germanium (Ge), co-doping with phosphorus (P) and antimony (Sb) by plasma assisted atomic layer deposition (PALD) and a subsequent annealing process [rapid thermal annealing process (RTP) or flash lamp annealing process (FLP)] are proposed and investigated. We found that the PALD stacked co-doping (POx/SiOy and Sb-2 O-5) films were uniformly deposited. Using the conventional RTP method led to a low doping concentration (<3 x 10(19) cm(-3)). However, FLP with a Xenon (Xe) lamp (lamp duration: 3 ms; energy density: 56 J/cm(2)) raised the surface temperature to nearly 800 degrees C. Furthermore, high concentrations of both P and Sb (>1 x 10(20) cm(-3)) were achieved at the surface. Our findings suggest that the FLP with high energy in a short amount of time (similar to 3 ms) can create the peak power effect and the co-doping effect. The evidence shows that these effects contribute to enhancing n-type doping levels in the Ge structure.
URI
http://hdl.handle.net/20.500.11750/10944
DOI
10.1109/LED.2019.2931404
Publisher
Institute of Electrical and Electronics Engineers
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
There are no files associated with this item.
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Jang Lab.1. Journal Articles
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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