Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.85
We cannot image that people can live without electrical devices. Therefore, interaction and interconnection between human and device are becoming more and more important with the lapse of time. The development of flexible electronics could be one reason because it is easy-to-read, lightweight, portable, flexible, and unbreakable. Given its attractive characteristics, nowadays, innovative flexible electronics is opening up next-generation technologies and leading the paradigm shift of the electronic applications; potential applications could include flexible human-health patches, epidermal sensors, artificial skin, and electronic papers. It could change a picture of our life, which does not exist today. As science/engineering advances, we might all have the opportunity to see our dreams become reality.
To ride the wave of the new industrial revolution, we will use a synergistic combination of 1) device friendly and 2) human friendly approaches as summarized in the below conceptual schematics.
Advisor Professor : Kwon, Hyuk-Jun
Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab. Homepage
To ride the wave of the new industrial revolution, we will use a synergistic combination of 1) device friendly and 2) human friendly approaches as summarized in the below conceptual schematics.
Advisor Professor : Kwon, Hyuk-Jun
Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab. Homepage
Subject
- FABRICATION 5
- Sol-gel 5
- OXIDE 4
- PERFORMANCE 4
- SURFACE 4
- thin film transistors 4
- Combustion 3
- ELECTRONICS 3
- FIELD-EFFECT TRANSISTORS 3
- FILMS 3
Date issued
- 2020 - 2026 56
- 2010 - 2019 13
- 2009 - 2009 1
Co-Author(s)
Related Keyword
Recent Submissions
- Achieving wide-range steep slopes in SnS2 negative capacitance transistors through an isolated band structure and thermionic emission enhancement via Bi contacts
- Materials Horizons Emerging Investigator Series: Professor Hyuk-Jun Kwon, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, Republic of Korea
- High-Spatiotemporal-Resolution Transparent Thermoelectric Temperature Sensor Arrays Reveal Temperature-Dependent Windows for Reversible Photothermal Neuromodulation
- Hole Current Enhancement Using W1-x Cr x Se2 Alloy Interface for p-Type WSe2 FETs
- Heterojunction Wide-Bandgap Amorphous Metal Oxide High-Voltage Thin-Film Transistors with High Driving Current and Low Process Temperature
