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Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer

Article
Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
  • 2016-09
  • Kim, Youngjae. (2016-09). Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer. Scientific Reports, 6, 33395. doi: 10.1038/srep33395
  • Nature Publishing Group
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