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Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
- Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
- Kim, Youngjae; Yun, Won Seok; Lee, J. D.
- DGIST Authors
- Lee, J. D.
- Issue Date
- Scientific Reports, 6
- Article Type
- Functionalized X-Bi bilayers (X = Ga, In, and Tl) with halogens bonded on their both sides have been recently claimed to be the giant topological insulators due to the strong band inversion strengths. Employing the first-principles electronic structure calculation, we find the topological band order transition from the order p-p-s of the X-Bi bilayers with halogens on their both sides to the new order p-s-p of the bilayers (especially for X = Ga and In) with halogen on one side and hydrogen on the other side, where the asymmetric hydrogen bonding simulates the substrate. We further find that the p-s bulk band gap of the bilayer bearing the new order p-s-p sensitively depends on the electric field, which enables a meaningful engineering of the quantum spin Hall edge state by controlling the external electric field. © 2016 The Author(s).
- Nature Publishing Group
- Related Researcher
Lee, Jae Dong
Light and Matter Theory Laboratory
Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
- Department of Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles
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