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Showing results 1 to 3 of 3

Article
A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications
  • Kim, Dongmin ; 
  • Jang, Seunghyeok ; 
  • Lee, Junghyup ; 
  • Im, Donggu
  • 2021-02
  • Kim, Dongmin. (2021-02). A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications. IEEE Microwave and Wireless Components Letters, 31(2), 165–168. doi: 10.1109/LMWC.2020.3042233
  • Institute of Electrical and Electronics Engineers
  • View : 700
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Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity

Article
Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity
  • Jang, Juneyoung ; 
  • Choi, Pyung ; 
  • Lyu, Hong-Kun ; 
  • Shin, Jang-Kyoo
  • 2022-01
  • Jang, Juneyoung. (2022-01). Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity. 센서학회지, 31(1), 1–5. doi: 10.46670/JSST.2022.31.1.1
  • 한국센서학회
  • View : 342
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Article
Power MOSFET-Diode-Based Limiter for High-Frequency Ultrasound Systems
  • Choi, Hojong ; 
  • Kim, Min Gon ; 
  • Cummins, Thomas M. ; 
  • Hwang, Jae Youn ; 
  • Shung, K. Kirk
  • 2014-10
  • Choi, Hojong. (2014-10). Power MOSFET-Diode-Based Limiter for High-Frequency Ultrasound Systems. Ultrasonic Imaging, 36(4), 317–330. doi: 10.1177/0161734614524180
  • SAGE Publications Ltd
  • View : 932
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