Cited 2 time in webofscience Cited 1 time in scopus

A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications

Title
A Broadband PVT-Insensitive All-nMOS Noise-Canceling Balun-LNA for Subgigahertz Wireless Communication Applications
Authors
Kim, DongminJang, SeunghyeokLee, JunghyupIm, Donggu
DGIST Authors
Lee, Junghyup
Issue Date
2021-02
Citation
IEEE Microwave and Wireless Components Letters, 31(2), 165-168
Type
Article
Article Type
Article
Author Keywords
common-gate (CG)common-source (CS)diode-connected loadlow-noise amplifier (LNA)noise-cancelingpost linearizationprocessvoltageand temperature (PVT) variationssubgigahertzwidebandNoise measurementTransistorsGainWireless communicationCurrent measurementMOSFETBroadband communicationBalun
Keywords
Voltage variationBroadband amplifiersDiode amplifiersDiodesNoise figureTransistorsCommon gate common sourcesInput return lossNMOS transistorsNoise cancelingNoise contributionsTemperature variationWireless communication applicationsLow noise amplifiers
ISSN
1531-1309
Abstract
A broadband process, voltage, and temperature (PVT)-insensitive noise-canceling balun-low-noise amplifier (LNA) was implemented in the 0.13-μm CMOS process for subgigahertz wireless communication applications. The proposed LNA is based on the traditional common-gate common-source (CGCS) balun-LNA topology, and it adopts the diode-connected loads to reduce the noise contribution originated from CGCS transistors and enhance the linearity due to post linearization. The auxiliary common-source (CS) amplifier with a diode-connected is added to reduce the overall noise figure (NF) of the LNA by sharing an input signal with CGCS transistors and applying its output signal to the diode-connected load of CS transistor. Because the voltage gain of the LNA is determined by the transconductance (gₘ) ratio of the same types of nMOS transistors, its power gain (S₂₁) and NF are quite roust over PVT variations. In experiments, it showed S₂₁ of 14 dB and NF of 4 dB with an input return loss (S₁₁) of greater than 10 dB at 450 MHz. Concerning voltage variation (1.08-1.32 V) and temperature variation (-20 °C ~ +80 °C), the worst variations in S₂₁ and NF were approximately 1.4 and 1.1 dB, respectively. IEEE
URI
http://hdl.handle.net/20.500.11750/12722
DOI
10.1109/LMWC.2020.3042233
Publisher
Institute of Electrical and Electronics Engineers
Related Researcher
  • Author Lee, Junghyup Integrated Nano-Systems Laboratory
  • Research Interests Analog and Mixed Signal IC Design; Smart Sensor Systems; Bio-medical ICs and Body Channel Communication Systems
Files:
There are no files associated with this item.
Collection:
Department of Information and Communication EngineeringIntegrated Nano-Systems Laboratory1. Journal Articles


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